PBLS6005D,115 The NXP Semiconductors PBLS6005D,115 is a pre-biased bipolar transistor featuring 1 NPN and 1 PNP channel. It offers a breakdown voltage of up to 60V and a continuous collector current of 700mA.
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PBLS6005D,115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PBLS6005D,115 is a pre-biased bipolar transistor featuring 1 NPN and 1 PNP channel. It offers a breakdown voltage of up to 60V and a continuous collector current of 700mA.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

PBLS6005D,115 Available from 1 distributor

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PBLS6005D,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Power Dissipation
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBLS6005D,115 Description

Short technical summary and product information.

The PBLS6005D,115 from NXP Semiconductors is a versatile pre-biased bipolar transistor array containing both NPN and PNP configurations. This device is designed for general-purpose small signal applications, offering a breakdown voltage of 50V for the NPN and 60V for the PNP transistor. It can handle continuous collector currents of up to 100mA for the NPN and 700mA for the PNP.

 

The transistor operates with a gain bandwidth product of 185MHz and a maximum power dissipation of 600mW. It features a built-in resistor with a value of 47kΩ. The PBLS6005D,115 is housed in a compact SC-74, SOT-457 package, suitable for surface mount applications. Its operating temperature range is from -65°C to 150°C.

 

This component is specified with RoHS3 compliance and an MSL 1 rating. The surface mountable design and dual-channel capability make it suitable for various circuit designs requiring small signal amplification or switching.

PBLS6005D,115 Quick Information

Product Type: Bipolar Transistor
Canonical Name: PBLS6005D,115 Pre-Biased Bipolar Transistor
Subcategory: Pre-Biased Transistor Arrays

PBLS6005D,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBLS6005D,115 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBLS6005D,115 Features

  • Dual NPN and PNP pre-biased channels.
  • Up to 60V collector-emitter breakdown voltage.
  • 100mA and 700mA continuous collector current.
  • 185MHz gain bandwidth product.
  • Compact SC-74, SOT-457 surface mount package.

PBLS6005D,115 Applications

  • Suitable for small signal switching applications.
  • Used in general-purpose amplifier circuits.
  • Ideal for low-voltage, high-frequency switching.
  • Applicable in pre-biased transistor array configurations.

PBLS6005D,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage for the PBLS6005D,115 transistor?

The breakdown voltage is 50V for the NPN transistor and 60V for the PNP transistor.

What are the continuous collector current ratings?

The continuous collector current ratings are 100mA for the NPN and 700mA for the PNP.

What is the gain bandwidth product of this transistor?

The gain bandwidth product is 185MHz.

What is the operating temperature range?

The operating temperature range is from -65°C to 150°C.

What package type is the PBLS6005D,115 in?

It is supplied in a SC-74, SOT-457 package.

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