| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
| Transistor Type |
The NXP Semiconductors PBLS6005D is a pre-biased bipolar junction transistor (BJT) array designed for various electronic applications. This component integrates one NPN and one PNP transistor, simplifying circuit design and reducing component count.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 60V and a maximum collector current of 100mA. The device features a transition frequency of 185MHz, making it suitable for moderate-speed switching and amplification tasks. Integrated base resistors (R1) of 47kOhms and emitter base resistors (R2) of 47kOhms are included, simplifying external biasing requirements.
This transistor array is housed in a compact SC-74, SOT-457 surface-mount package, ideal for space-constrained PCB designs. The maximum power dissipation is rated at 600mW. Its pre-biased configuration allows for direct connection to logic signals, facilitating easier integration into digital and mixed-signal circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PBLS6005D comes in SC-74 (also known as SOT-457) surface mount package.
It contains 1 NPN pre-biased transistor and 1 PNP transistor.
It has a 47kΩ base resistor (R1) and a 47kΩ emitter-base resistor (R2).
The maximum Vce breakdown voltage is 50V for the NPN and 60V for the PNP transistor.
Maximum collector current is 100mA for the NPN and 700mA for the PNP transistor.
600mW.
185 MHz.