| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,556 pcs
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6556 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The PBLS4005V,115 from NXP Semiconductors is a compact load switch combining a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET) within a single SOT-666 package. This integration offers a space-saving solution, reducing component count and drive power requirements compared to discrete MOSFETs.
Key electrical specifications include a collector-emitter voltage of -40V for the PNP transistor and 50V for the NPN transistor. The PNP transistor supports a collector current of up to -500mA with a saturation resistance of 700mΩ, while the NPN transistor handles up to 100mA. It features a typical bias resistor value of 47kΩ and a typical DC current gain (hFE) of 80 for the PNP and 150 for the NPN.
Designed for applications such as supply line switches, battery charger switches, and high-side switches for LEDs, drivers, and backlights in portable equipment, the PBLS4005V,115 is suitable for space-constrained designs. The component is supplied in a surface-mount SOT-666 package, facilitating automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PNP transistor has a collector-emitter voltage of -40V, and the NPN transistor has a collector-emitter voltage of 50V.
The PNP transistor supports a maximum collector current of -500mA, and the NPN transistor supports a maximum collector current of 100mA.
The PBLS4005V,115 is supplied in a SOT-666 surface-mount package.
The typical bias resistor value (R1) for this transistor is 47 kΩ.
The typical DC current gain (hFE) for the NPN transistor is 150 at 100mA collector current and 2V Vce.