| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,250 pcs
|
1250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The P6403FMG is a P-Channel Enhancement Mode MOSFET manufactured by NIKO-SEM. It is designed for various electronic applications requiring efficient switching and power control.
Key electrical characteristics include a Drain-Source Voltage (VDS) of -30V and a Gate-Source Voltage (VGS) of ±12V. The Continuous Drain Current (ID) is rated at -3A at 25°C and -2.3A at 70°C, with a Pulsed Drain Current (IDM) of -20A. The On-Resistance (RDS(ON)) is 64mΩ at a VGS of -4.5V, indicating good conduction efficiency.
This MOSFET is housed in a compact SOT-23 package, suitable for surface-mount applications where space is a constraint. Its specifications make it a suitable component for general-purpose switching and amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
-3A
64mΩ
SOT-23