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865 pcs
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865 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The P55NF06 is an N-channel enhancement mode power MOSFET manufactured by STMicroelectronics. It is designed for high-current, high-speed switching applications and is commonly used in voltage regulators, power management circuits, inverters, and motor control circuits.
Key electrical specifications include a drain-source breakdown voltage of 60V and a continuous maximum drain current of 50A at 25°C. The drain-source on-state resistance is 15 mOhms, and the gate-source voltage rating is 20V, with a gate-source threshold voltage of 3V.
This MOSFET features low gate charge, fast switching speed, and low input capacitance, contributing to its excellent thermal performance. It is available in the TO-220 package and is designed for through-hole mounting.
The P55NF06 is suitable for various applications requiring efficient power control and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60 V.
The continuous maximum drain current at 25°C is 50 A.
The drain-source on-state resistance is 15 mOhms.
The gate-source voltage rating is 20 V.
The gate-source threshold voltage is 3 V.
The P55NF06 MOSFET is supplied in the TO-220 package.
The P55NF06 MOSFET is mounted using the through-hole method.
