P5504EDG The P5504EDG is a P-Channel MOSFET from NIKO-SEM. It features a -40V Drain-Source Voltage and low on-resistance.
Mfr Part #:

P5504EDG

Available from 2 distributors
Mfr Name: NIKO-SEM
NIKO-SEM
The P5504EDG is a P-Channel MOSFET from NIKO-SEM. It features a -40V Drain-Source Voltage and low on-resistance.
✓ Total Stock: 1,162 pcs
$ Price Range: $2.54

P5504EDG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
666 pcs
666 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
496 pcs
496 pcs On Request 1 On Request On Request 06+ On Request On Request

P5504EDG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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P5504EDG Description

Short technical summary and product information.

The P5504EDG is a P-Channel MOSFET manufactured by NIKO-SEM. It is designed with TrenchFET® power MOSFET technology, offering a low thermal resistance package.

 

Key electrical specifications include a Drain-Source Voltage (VDS) of -40V. The Drain-Source On-State Resistance (RDS(on)) is as low as 0.012Ω at a Gate-Source Voltage (VGS) of -10V and 0.015Ω at VGS = -4.5V. Continuous Drain Current (ID) is rated at -50A at 25°C case temperature.

 

This MOSFET is housed in a TO-252 package and is suitable for surface mounting. It operates within a wide temperature range of -55°C to +175°C. The device is 100% tested for Rg and UIS.

 

Applications for this P-Channel MOSFET can leverage its power handling capabilities and low on-resistance for various switching and power management tasks.

P5504EDG Quick Information

Product Type: MOSFET
Canonical Name: P5504EDG P-Channel Power MOSFET
Subcategory: P-Channel

P5504EDG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

P5504EDG Estimated Pricing

Qty Low High
1+ $2.54 $2.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

P5504EDG Features

  • P-Channel TrenchFET power MOSFET.
  • Low thermal resistance package.
  • -40V Drain-Source Voltage.
  • Low RDS(on) down to 0.012Ω.
  • Surface mount TO-252 package.

P5504EDG Applications

  • Suitable for power switching.
  • Used in power management circuits.
  • Ideal for load switching.
  • Applications requiring low RDS(on).

P5504EDG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Breakdown Voltage of the P5504EDG?

The Drain-Source Breakdown Voltage (VDS) is -40V when VGS is 0V and ID is -250 μA.

What is the typical Gate-Source Threshold Voltage for the P5504EDG?

The Gate-Source Threshold Voltage (VGS(th)) ranges from -1.5V to -2.5V when VDS equals VGS and ID is -250 μA.

What is the maximum continuous drain current for the P5504EDG at 25°C?

The maximum continuous drain current (ID) is -50A at a case temperature of 25°C.

What is the Drain-Source On-State Resistance at VGS = -10V and ID = -17A?

The Drain-Source On-State Resistance (RDS(on)) is between 0.012Ω and 0.014Ω under these conditions.

What is the operating temperature range for the P5504EDG?

The operating and storage temperature range is from -55°C to +175°C.

What package type is the P5504EDG MOSFET in?

The P5504EDG comes in a TO-252 package.

What is the RoHS status of the P5504EDG?

The RoHS status is RoHS3 Compliant.

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