| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
666 pcs
|
666 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
496 pcs
|
496 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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| Tape & Reel |
The P5504EDG is a P-Channel MOSFET manufactured by NIKO-SEM. It is designed with TrenchFET® power MOSFET technology, offering a low thermal resistance package.
Key electrical specifications include a Drain-Source Voltage (VDS) of -40V. The Drain-Source On-State Resistance (RDS(on)) is as low as 0.012Ω at a Gate-Source Voltage (VGS) of -10V and 0.015Ω at VGS = -4.5V. Continuous Drain Current (ID) is rated at -50A at 25°C case temperature.
This MOSFET is housed in a TO-252 package and is suitable for surface mounting. It operates within a wide temperature range of -55°C to +175°C. The device is 100% tested for Rg and UIS.
Applications for this P-Channel MOSFET can leverage its power handling capabilities and low on-resistance for various switching and power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (VDS) is -40V when VGS is 0V and ID is -250 μA.
The Gate-Source Threshold Voltage (VGS(th)) ranges from -1.5V to -2.5V when VDS equals VGS and ID is -250 μA.
The maximum continuous drain current (ID) is -50A at a case temperature of 25°C.
The Drain-Source On-State Resistance (RDS(on)) is between 0.012Ω and 0.014Ω under these conditions.
The operating and storage temperature range is from -55°C to +175°C.
The P5504EDG comes in a TO-252 package.
The RoHS status is RoHS3 Compliant.