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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Cutoff Current | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| IC (Maximum @ Continuous) | |
| ICBO (Maximum @ VCB = 60 Vdc, IE = 0) | |
| ICBO (Maximum @ VCB = 60 Vdc, IE = 0, TA = 150 °C) | |
| Mounting Type | |
| Operating Temperature | |
| PD (Maximum @ Tc=25 °C) | |
| Pd (Maximum @ Ta=25 °C) | |
| Power | |
| Supplier Device Package | |
| TJ, Tstg | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ IC = 0.1 mAdc, VCE = 10 Vdc) | |
| hFE (Minimum @ IC = 1.0 mAdc, VCE = 10 Vdc) | |
| hFE (Minimum @ IC = 10 mAdc, VCE = 10 Vdc) | |
| hFE (Minimum @ IC = 10 mAdc, VCE = 10 Vdc, TA = –55 °C) | |
| hFE (Minimum @ IC = 150 mAdc, VCE = 1.0 Vdc) | |
| hFE (Minimum @ IC = 150 mAdc, VCE = 10 Vdc) | |
| hFE (Minimum @ IC = 500 mAdc, VCE = 10 Vdc) |
The ON Semiconductor P2N2222AG is an NPN silicon bipolar junction transistor (BJT) designed for amplifier applications. It offers a maximum collector-emitter voltage of 40V and a continuous collector current of up to 600mA.
This transistor has a maximum power dissipation of 625mW at 25°C ambient temperature. It operates within a junction temperature range of -55°C to +150°C. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage.
The P2N2222AG is housed in a TO-92 package, suitable for through-hole mounting. Its thermal resistance from junction to ambient is 200°C/W, and from junction to case is 83.3°C/W.
Key electrical characteristics include a collector-base voltage of 75Vdc and an emitter-base voltage of 6.0Vdc. The transistor exhibits a frequency response up to 300MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the P2N2222AG is 40 Vdc.
The continuous collector current (IC) rating for this transistor is 600 mAdc.
The total device dissipation (PD) at 25°C ambient temperature is 625 mW.
The operating and storage junction temperature range is -55°C to +150°C.
The P2N2222AG is supplied in a TO-92 package.
The minimum DC current gain (hFE) at 150mA collector current and 10V collector-emitter voltage is 100.