| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
473 pcs
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473 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Intel P21256-10 is a 256K x 1-bit Dynamic Random Access Memory (DRAM) integrated circuit. This component is designed for memory applications requiring a density of 262,144 bits.
Key electrical specifications include an access time of 100 nanoseconds and a refresh cycle of 256 cycles per 4ms, indicating a rectangular cell matrix of 256 rows by 1024 columns. The chip operates using NMOS technology and is packaged in a Dual In-line Package (DIP), suitable for through-hole mounting.
This DRAM is RoHS3 compliant, ensuring adherence to environmental regulations. Its Moisture Sensitivity Level (MSL) is rated as 1, indicating unlimited shelf life under standard conditions. The REACH status is unaffected, suggesting no specific regulatory concerns within the REACH framework.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The access time for the Intel P21256-10 is 100 ns.
The P21256-10 uses NMOS technology.
The refresh cycle for the P21256-10 is 256 cycles per 4ms.
The Intel P21256-10 is available in a DIP package.