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P2003EVG The NIKO-SEM P2003EVG is a P-Channel Logic Level Enhancement Mode Field Effect Transistor. It features a drain-source breakdown voltage of -30V and a low on-state resistance.
Mfr Part #:

P2003EVG

Available from 3 distributors
Mfr Name: NIKO-SEM
NIKO-SEM
The NIKO-SEM P2003EVG is a P-Channel Logic Level Enhancement Mode Field Effect Transistor. It features a drain-source breakdown voltage of -30V and a low on-state resistance.
✓ Total Stock: 19,674 pcs
$ Price Range: $1.87

P2003EVG Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
14,109 pcs
On Request
14109 pcs On Request 1 On Request On Request 12+11 On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,465 pcs
On Request
4465 pcs On Request 1 On Request On Request 13+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,100 pcs
On Request
1100 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

P2003EVG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Forward Voltage
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P2003EVG Description

Short technical summary and product information.

The NIKO-SEM P2003EVG is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. It offers a drain-source breakdown voltage of -30V and a low on-state resistance, with RDS(ON) as low as 20mΩ at VGS = -10V and ID = -9A. The continuous drain current is rated at -9A at 25°C and -8A at 70°C.

 

This transistor is housed in a SOP-8 package, suitable for surface mount applications. Key electrical characteristics include a gate threshold voltage ranging from -1V to -3V, and dynamic parameters such as input capacitance (Ciss) of 1610pF and output capacitance (Coss) of 410pF.

 

Absolute maximum ratings include a drain-source voltage of -30V and a gate-source voltage of ±20V. The operating junction and storage temperature range is from -55°C to 150°C. Thermal resistance from junction to case is 25°C/W, and junction to ambient is 50°C/W.

P2003EVG Quick Information

Product Type: Field Effect Transistor
Canonical Name: P-Channel Logic Level Enhancement Mode Field Effect Transistor
Subcategory: Special Purpose

P2003EVG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

P2003EVG Estimated Pricing

Qty Low High
1+ $1.87 $1.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

P2003EVG Features

  • P-Channel Logic Level Enhancement Mode FET
  • Drain-Source Breakdown Voltage: -30V
  • Low On-State Resistance: 20mΩ typical
  • Continuous Drain Current: 9A
  • SOP-8 Surface Mount Package

P2003EVG Applications

  • Suitable for power switching applications
  • Ideal for low-voltage motor control
  • Used in battery management systems
  • Applicable in load switch circuits

P2003EVG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the P2003EVG?

The P2003EVG is packaged in an SOP-8 surface-mount package.

What is the drain-source breakdown voltage of the P2003EVG?

-30V.

What is the maximum gate threshold voltage of the P2003EVG?

-3V.

What is the operating temperature range of the P2003EVG?

-55°C to 150°C.

Is the P2003EVG RoHS compliant?

Yes, it is RoHS3 compliant.

Is the P2003EVG lead-free?

Yes, it is lead-free.

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