| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
3,665 pcs
|
3665 pcs | On Request | 1 | On Request | On Request | 2011 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Package / Case | |
| Reverse Recovery Time |
The P1504EDG is a P-Channel Enhancement Mode Field Effect Transistor manufactured by NIKO-SEM. This component is designed for various electronic applications requiring a reliable MOSFET. It features a Drain-Source Voltage (VDS) of -40V and a Gate-Source Voltage (VGS) of ±20V.
The transistor exhibits a low Drain-Source On-State Resistance (RDS(ON)), with a typical value of 13mΩ at VGS = -10V and ID = -25A, and 19mΩ at VGS = -4.5V and ID = -15A. The continuous drain current (ID) is rated at -45A at 25°C case temperature and -36A at 70°C case temperature.
Dynamic characteristics include input capacitance (Ciss) of 2700pF, output capacitance (Coss) of 400pF, and reverse transfer capacitance (Crss) of 230pF, all measured at 1MHz. The device also has a typical Gate Resistance (Rg) of 3.5Ω.
Packaged in a TO-252 package, the P1504EDG is suitable for surface-mount applications. It is also Halogen-Free and Lead-Free, aligning with environmental standards.
-40V
-2.2V
13mΩ
19mΩ
-45A
TO-252
Yes