| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor P1086 is a P-Channel Junction Field-Effect Transistor (JFET) designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. It operates with a Gate-Source Voltage of up to 30V and handles a Drain-Gate Voltage of -30V.
This JFET offers a typical Drain-Source On Voltage of 0.5V at 6mA and a maximum Drain-Source On Resistance of 75 Ohms. The device has a total power dissipation of 350mW and an operating and storage junction temperature range of -55°C to +150°C.
The P1086 is packaged in a TO-92-3 through-hole configuration, making it suitable for various circuit designs. Its electrical characteristics include an input capacitance (Ciss) of 45pF at 15V and a reverse transfer capacitance (Crss) of 10pF at 12V. Switching times are also specified, with turn-on and turn-off times around 15ns and rise/fall times of 20ns and 50ns respectively.
This component is sourced from process 88 and is designed for reliability in sensitive analog applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Gate-Source Voltage for the P1086 JFET is 30V.
The operating temperature range for the P1086 is -55°C to +150°C.
The P1086 JFET is supplied in a TO-92-3 package.
The Drain-Source On Resistance (RDS(on)) of the P1086 is a maximum of 75 Ohms.
The total power dissipation for the P1086 is 350mW.