| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,164 pcs
|
1164 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The P1004BS is an N-Channel Enhancement Mode MOSFET manufactured by NIKO-SEM. This component is designed for various electronic applications requiring efficient switching and power handling.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 40V and a low On-Resistance of 11mΩ when measured at a Gate-Source Voltage of 10V. The continuous drain current is rated at 53A at a case temperature of 25°C, with a pulsed drain current capability of up to 159A. The Gate-Source Voltage is rated for ±20V.
This MOSFET is housed in a TO-263 package, making it suitable for surface-mount applications where thermal management is important. The avalanche current is rated at 40A.
Compliance information indicates RoHS3 compliance, an MSL rating of 1 Unlimited, and REACH Unaffected status. These attributes are based on existing database information and should be reviewed.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the P1004BS is 40V.
The typical on-resistance at VGS = 10V is 11mΩ.
The maximum continuous drain current at 25°C is 53A.
The P1004BS is available in a TO-263 package.
The pulsed drain current is 159A.