| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments OPA859IDSGR is a high-speed operational amplifier with a FET input architecture, designed for applications requiring exceptional performance. It boasts a 1.8 GHz unity-gain bandwidth and a gain bandwidth product of 900 MHz, enabling rapid signal amplification.
This amplifier exhibits a low input voltage noise density of 3.3 nV/√Hz at flatband and a high slew rate of 1150 V/µs, making it suitable for high-frequency signal conditioning. The ultra-low input bias current of 5 pA is achieved through its MOSFET input stage.
Operating over a supply voltage range of 3.3 V to 5.25 V, the OPA859IDSGR is housed in an 8-pin WSON package with dimensions of 2 mm x 2 mm. Its operating temperature range is -40°C to +125°C, ensuring reliability in various environmental conditions. The device also features a wide input common-mode range and a 2.5 VPP output swing in a TIA configuration.
The unity-gain bandwidth of the OPA859IDSGR is 1.8 GHz.
The typical input voltage noise density at flatband for the OPA859IDSGR is 3.3 nV/√Hz.
The slew rate of the OPA859IDSGR is typically 1150 V/µs.
The operating temperature range for the OPA859IDSGR is -40°C to +125°C.
The OPA859IDSGR is supplied in an 8-pin WSON (DSG) package.