Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,391 pcs
|
3391 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,391 pcs
|
3391 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,162 pcs
|
1162 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage (VBE(ON)) | |
| Breakdown Voltage (Minimum @ IC = -10 mA) | |
| Breakdown Voltage (Minimum @ IC = -100) | |
| Breakdown Voltage (Minimum @ IE = -100) | |
| Current | |
| Current Gain (Minimum @ IC = -1 A, VCE = -2 V) | |
| Current Gain (Minimum @ IC = -100 mA, VCE = -2 V) | |
| Current Gain (Minimum @ IC = -3 A, VCE = -2 V) | |
| Current Gain (Minimum/Maximum @ IC = -500 mA, VCE = -2 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Leakage Current (Maximum @ VCB = -30 V) | |
| Leakage Current (Maximum @ VCB = -30 V, TA = 100 °C) | |
| Leakage Current (Maximum @ VEB = -4 V) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Saturation Voltage (Maximum @ IC = -1 A, IB = -100 mA) | |
| Saturation Voltage (Maximum @ IC = -3 A, IB = -300 mA) | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Transistor Type | |
| Transition Frequency | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NZT660A is a PNP low-saturation transistor manufactured by ON Semiconductor. It is designed to handle collector currents up to 3A continuously, offering high current gain and low saturation voltage.
This transistor features a collector-emitter voltage rating of -60V and an emitter-base voltage rating of -5V. Its operating and storage junction temperature range is from -55°C to +150°C. The device has a total power dissipation of 2W and a thermal resistance of 62.5°C/W.
The NZT660A is supplied in a SOT-223-4 package, which is a surface-mount type. It is available on tape and reel in quantities of 4,000 units.
Key electrical characteristics include a minimum DC current gain (hFE) of 250 at 500mA and 2V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 500mV at 3A and 300mA base current. The transition frequency (fT) is 75MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the NZT660A is -60V.
The maximum continuous collector current for the NZT660A is 3A.
The operating temperature range for the NZT660A is -55°C to 150°C.
The NZT660A is supplied in a SOT-223-4 package.
The minimum DC current gain (hFE) of the NZT660A at 500mA and 2V is 250.
The maximum collector-emitter saturation voltage (Vce(sat)) for the NZT660A at 3A and 300mA is 500mV.