NZT660 The On Semiconductor NZT660 is a PNP low-saturation transistor designed for high-current applications. It offers a 60V collector-emitter voltage and 3A continuous collector current in a compact SOT-223 package.
Mfr Part #:

NZT660

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NZT660 is a PNP low-saturation transistor designed for high-current applications. It offers a 60V collector-emitter voltage and 3A continuous collector current in a compact SOT-223 package.
✓ Total Stock: 95,470 pcs
$ Price Range: $0.99

NZT660 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
80,366 pcs
80366 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
11,814 pcs
11814 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 1023 On Request On Request
Non-Authorised Inventory information
790 pcs
790 pcs On Request 1 On Request On Request 1832+ On Request On Request

NZT660 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NZT660 Description

Short technical summary and product information.

The NZT660 from On Semiconductor is a PNP bipolar junction transistor (BJT) designed for applications requiring high current gain and low saturation voltage. This device is capable of handling continuous collector currents up to 3 A and features a collector-emitter voltage rating of -60 V.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 100mA and 25 at 3A, with a VCE(sat) of -550mV at 3A. The transistor operates within a junction temperature range of -55°C to +150°C and has a total power dissipation of 2 W.

 

Packaged in a surface-mount SOT-223-4 configuration, the NZT660 is suitable for various electronic circuits where efficient high-current switching or amplification is needed. Its low saturation voltage minimizes power loss, making it an efficient choice for power management applications.

 

This transistor is part of the low-saturation PNP transistor family, offering robust performance for demanding applications. The SOT-223 package is widely used in consumer electronics, industrial controls, and automotive systems.

NZT660 Quick Information

Product Type: PNP Transistor
Canonical Name: NZT660 PNP Low-Saturation Transistor
Subcategory: Single

NZT660 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NZT660 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NZT660 Features

  • PNP low-saturation transistor design.
  • 60V collector-emitter voltage rating.
  • 3A continuous collector current capability.
  • Low VCE(sat) for efficiency.
  • Surface mount SOT-223-4 package.

NZT660 Applications

  • High-current switching applications.
  • Power supply regulation circuits.
  • General purpose amplification.
  • Industrial control systems.
  • Consumer electronics designs.

NZT660 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NZT660?

-60 V

What is the continuous collector current rating of the NZT660?

-3 A

What is the operating temperature range for the NZT660 transistor?

-55°C ~ 150°C

What package type is the NZT660 supplied in?

SOT-223-4

What is the RoHS status of the NZT660?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for the NZT660?

1 Unlimited

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