| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80,366 pcs
|
80366 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
11,814 pcs
|
11814 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1023 | On Request | On Request | |
|
790 pcs
|
790 pcs | On Request | 1 | On Request | On Request | 1832+ | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NZT660 from On Semiconductor is a PNP bipolar junction transistor (BJT) designed for applications requiring high current gain and low saturation voltage. This device is capable of handling continuous collector currents up to 3 A and features a collector-emitter voltage rating of -60 V.
Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 100mA and 25 at 3A, with a VCE(sat) of -550mV at 3A. The transistor operates within a junction temperature range of -55°C to +150°C and has a total power dissipation of 2 W.
Packaged in a surface-mount SOT-223-4 configuration, the NZT660 is suitable for various electronic circuits where efficient high-current switching or amplification is needed. Its low saturation voltage minimizes power loss, making it an efficient choice for power management applications.
This transistor is part of the low-saturation PNP transistor family, offering robust performance for demanding applications. The SOT-223 package is widely used in consumer electronics, industrial controls, and automotive systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
-3 A
-55°C ~ 150°C
SOT-223-4
RoHS3 Compliant
1 Unlimited