NXH80B120MNQ0SNG The On Semiconductor NXH80B120MNQ0SNG is a power module with a dual boost stage. It integrates SiC MOSFETs and SiC Diodes for high efficiency and reliability.
Mfr Part #:

NXH80B120MNQ0SNG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NXH80B120MNQ0SNG is a power module with a dual boost stage. It integrates SiC MOSFETs and SiC Diodes for high efficiency and reliability.
✓ Total Stock: 1,028 pcs
$ Price Range: $0.99

NXH80B120MNQ0SNG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,028 pcs
1028 pcs On Request 1 On Request On Request On Request On Request On Request

NXH80B120MNQ0SNG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Halogen Free
Industrial Grade
Input
Medical Grade
Military Grade
Mounting Type
NTC Thermistor
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel

NXH80B120MNQ0SNG Description

Short technical summary and product information.

The NXH80B120MNQ0SNG from On Semiconductor is a power module designed for high-efficiency applications. It features integrated Silicon Carbide (SiC) MOSFETs and SiC Diodes, offering lower conduction and switching losses.

 

Key electrical specifications include a Drain-Source Voltage of 1200V and a Continuous Drain Current of 23A at 80°C. The module also incorporates 1200V SiC Diodes with a Continuous Forward Current of 31A at 80°C, and bypass diodes rated at 1600V. The operating junction temperature ranges from -40°C to 175°C.

 

This module is housed in a Q0 Package with a chassis mount type. It includes an NTC thermistor and is designed with a low inductive layout. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

Typical applications for the NXH80B120MNQ0SNG include solar inverters and uninterruptible power supplies (UPS).

NXH80B120MNQ0SNG Quick Information

Product Type: Power Module
Canonical Name: Silicon Carbide (SiC) Module – EliteSiC, 80 mohm, SiC M1 MOSFET, 1200 V + 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package
Subcategory: Transistors - IGBTs - Modules

NXH80B120MNQ0SNG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NXH80B120MNQ0SNG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH80B120MNQ0SNG Features

  • 1200 V 80 mOhm SiC MOSFETs.
  • Low reverse recovery SiC diodes.
  • 1600 V bypass and anti-parallel diodes.
  • Chassis mountable power module.
  • Pb-Free and Halogen Free compliant.

NXH80B120MNQ0SNG Applications

  • Suitable for high-voltage power switching
  • Used in motor control circuits
  • Ideal for power conversion applications
  • Designed for high-temperature environments

NXH80B120MNQ0SNG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the NXH80B120MNQ0SNG?

The maximum Drain-Source Voltage is 1200 V.

What is the operating temperature range for this power module?

The operating junction temperature range is -40°C to 175°C.

What type of package does the NXH80B120MNQ0SNG use?

It uses a Module package, specifically the 22-PIM/Q0BOOST (55x32.5) supplier device package.

Is the NXH80B120MNQ0SNG RoHS compliant?

Yes, the RoHS Status is RoHS3 Compliant.

Does this module include an NTC Thermistor?

Yes, it includes an NTC Thermistor.

Home
Account

Categories