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NXH80B120H2Q0SG

The On Semiconductor NXH80B120H2Q0SG is a Dual Boost IGBT Module with a 1200V collector-emitter voltage rating. It features a 41A continuous collector current and a maximum operating junction temperature of 150°C.

✓ Total Stock: 688 pcs

$ Price Range: $0.99

NXH80B120H2Q0SG Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	688 pcs On Request	688 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NXH80B120H2Q0SG Specifications Quick View

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Category	Transistors - IGBTs - Modules
Manufacturer Name	On Semiconductor

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NXH80B120H2Q0SG Description

Short technical summary and product information.

The NXH80B120H2Q0SG from On Semiconductor is a high-density, integrated power module designed for demanding applications. This IGBT module features a Dual Boost configuration with a 1200V collector-emitter voltage and a 41A continuous collector current rating.

Key electrical specifications include a typical VCE(SAT) of 2.2V for the IGBT and a typical VF of 1.4V for the integrated SiC diode. The module is rated for a maximum operating junction temperature of 150°C and has a maximum power dissipation of 103W for the IGBT and 79W for the diode.

Typical applications for the NXH80B120H2Q0SG include solar inverters, uninterruptible power supplies, and energy storage systems. The module incorporates an on-board thermistor for thermal monitoring and features a low inductive layout with solderable pins.

Packaged in a tray, this module is suitable for various power management solutions requiring robust and efficient switching performance.

NXH80B120H2Q0SG Quick Information

Product Type: IGBT Module

Canonical Name: NXH80B120H2Q0SG Dual Boost IGBT Module

Subcategory: Transistors - IGBTs - Modules

NXH80B120H2Q0SG Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NXH80B120H2Q0SG Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH80B120H2Q0SG Features

1200V collector-emitter voltage rating.
41A continuous collector current.
150°C maximum operating junction temperature.
Integrated SiC rectifier diodes.
Low inductive power module layout.

NXH80B120H2Q0SG Applications

Used in industrial power switching circuits
Suitable for inverter and motor drive applications
Ideal for high-voltage power modules
Designed for high-current switching

NXH80B120H2Q0SG FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the NXH80B120H2Q0SG?

The maximum collector-emitter voltage (VCES) for the BOOST IGBT is 1200 V.

What is the continuous collector current rating?

The continuous collector current (IC) at Th = 80°C (TJ = 175°C) is 41 A.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TJMAX) is 150 °C.

What are the typical applications for this IGBT module?

Typical applications include Solar Inverter, Uninterruptible Power Supplies, and Energy Storage Systems.

What is the RoHS status of the NXH80B120H2Q0SG?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.