| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,237 pcs
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1237 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXH50C120L2C2ES1G from On Semiconductor is an IGBT module with a robust 1200V voltage rating and a 50A current capability. This module is designed for demanding applications requiring efficient power switching.
Key electrical specifications include a maximum on-state voltage of 2.4V at 15V gate voltage and 50A collector current, and an input capacitance of 11.89nF at 20V. The device operates within a temperature range of -40°C to 150°C.
Packaged in a 26-PowerDIP module, the NXH50C120L2C2ES1G is suitable for through-hole mounting. It also includes an NTC thermistor for thermal monitoring and features a three-phase bridge rectifier input configuration.
This IGBT module is appropriate for various industrial power applications where high voltage and current handling are essential. Its through-hole design facilitates integration into existing circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage rating for the NXH50C120L2C2ES1G is 1200V.
The continuous current rating for the NXH50C120L2C2ES1G is 50A.
The operating temperature range is -40°C to 150°C.
The NXH50C120L2C2ES1G is designed for through-hole mounting.
The package type is 26-PowerDIP Module.