NXH40B120MNQ0SNG The On Semiconductor NXH40B120MNQ0SNG is a Silicon Carbide power module designed for high efficiency applications. It features a dual boost configuration and chassis mount.
Mfr Part #:

NXH40B120MNQ0SNG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NXH40B120MNQ0SNG is a Silicon Carbide power module designed for high efficiency applications. It features a dual boost configuration and chassis mount.
✓ Total Stock: 183 pcs
$ Price Range: $0.99

NXH40B120MNQ0SNG Available from 1 distributor

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✓ Non-Authorised
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183 pcs
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NXH40B120MNQ0SNG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Halogen Free
Input
Input Capacitance (Cies) @ Vce
Mounting Type
NTC Thermistor
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel

NXH40B120MNQ0SNG Description

Short technical summary and product information.

The NXH40B120MNQ0SNG from On Semiconductor is a Silicon Carbide (SiC) power module featuring a dual boost stage. This module integrates SiC MOSFETs and SiC Diodes, offering lower conduction and switching losses for enhanced efficiency and reliability.

 

Key electrical specifications include a Drain-Source Voltage of 1200V and a Continuous Drain Current of 38A. The module has a maximum power dissipation of 118W and operates within a junction temperature range of -40°C to 175°C. It also includes bypass and anti-parallel diodes with a peak repetitive reverse voltage of 1200V.

 

Designed for demanding applications, the NXH40B120MNQ0SNG is suitable for solar inverters and uninterruptible power supplies. It features a low inductive layout and solder pins for secure connections. The module is housed in a Q0 package and is designed for chassis mounting.

 

Environmental compliance includes RoHS3 status and it is also Pb-Free and Halogen Free. The module has an input capacitance of 3.227 nF at 20V and includes a standard NTC thermistor.

NXH40B120MNQ0SNG Quick Information

Product Type: Power Module
Canonical Name: NXH40B120MNQ0SNG Silicon Carbide Module
Subcategory: IGBT Module

NXH40B120MNQ0SNG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NXH40B120MNQ0SNG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH40B120MNQ0SNG Features

  • 1200V Silicon Carbide MOSFETs and Diodes.
  • Dual boost stage configuration.
  • 118W maximum power dissipation.
  • Chassis mountable module package.
  • Pb-Free and Halogen Free.

NXH40B120MNQ0SNG Applications

  • Suitable for high-voltage power conversion systems.
  • Ideal for solar inverter applications.
  • Used in uninterruptible power supplies (UPS).
  • Applicable in motor drive and control circuits.
  • Suitable for industrial power management systems.

NXH40B120MNQ0SNG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum operating junction temperature for this module?

The maximum operating junction temperature is 175°C.

What is the maximum continuous drain current?

The maximum continuous drain current is 38A.

What type of package does the NXH40B120MNQ0SNG use?

The NXH40B120MNQ0SNG uses the 22-PIM/Q0BOOST (55x32.5) package.

Is this module RoHS compliant?

Yes, this module is RoHS3 Compliant.

What is the operating temperature range?

The operating temperature range is -40°C to 175°C.

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