| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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36 pcs
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36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The NXH400N100H4Q2F2SG from On Semiconductor is a high-density, integrated power module combining high-performance IGBTs with rugged anti-parallel diodes. It features Trench Field Stop technology for extreme efficiency and low switching loss, contributing to reduced system power dissipation.
This module boasts a 1000V collector-emitter voltage and a continuous collector current of 409A at 80°C. The maximum power dissipation is rated at 959W, with an operating junction temperature range of -40°C to 175°C. The IGBT configuration is designed for three-level inverter applications.
Designed for high power density, the module utilizes a low inductive layout and a low package height. It is suitable for applications such as solar inverters and uninterruptible power supply systems. The module is available in a 42-PIM/Q2PACK (93x47) package and is chassis mountable. It also includes an NTC thermistor for temperature monitoring.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vces) for the NXH400N100H4Q2F2SG is 1000 V.
The continuous collector current (Ic) at 80°C is 409 A.
The maximum power dissipation (Ptot) for the NXH400N100H4Q2F2SG is 959 W at a junction temperature of 150°C.
The operating junction temperature range is -40°C to 175°C.
Yes, the NXH400N100H4Q2F2SG is RoHS3 Compliant.
This module uses Trench Field Stop IGBT technology.