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NXH400N100H4Q2F2PG The On Semiconductor NXH400N100H4Q2F2PG is a Si/SiC Hybrid IGBT Module with a 1000V rating and 409A continuous collector current. It features Trench Field Stop technology for high efficiency.
Mfr Part #:

NXH400N100H4Q2F2PG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NXH400N100H4Q2F2PG is a Si/SiC Hybrid IGBT Module with a 1000V rating and 409A continuous collector current. It features Trench Field Stop technology for high efficiency.
✓ Total Stock: 144 pcs
$ Price Range: $0.99

NXH400N100H4Q2F2PG Available from 1 distributor

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✓ Non-Authorised
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144 pcs
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NXH400N100H4Q2F2PG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Continuous Forward Current
Current
Halogen Free
IGBT Type
Input
Input Capacitance (Cies) @ Vce
Mounting Type
NTC Thermistor
Operating Temperature
Power
Supplier Device Package
Vce(on) (Max) @ Vge, Ic
Voltage
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NXH400N100H4Q2F2PG Description

Short technical summary and product information.

The NXH400N100H4Q2F2PG from On Semiconductor is a high-density, integrated power module combining high-performance IGBTs with rugged anti-parallel diodes. This module utilizes Trench Field Stop technology for extremely efficient operation and low switching losses, reducing system power dissipation.

 

Key electrical specifications include a Collector-Emitter Voltage of 1000V, a Continuous Collector Current of 409A at 80°C, and a Pulsed Peak Collector Current of 1227A. The maximum power dissipation is rated at 959W. The module operates within a junction temperature range of -40°C to 175°C.

 

Designed for high power density, this module features a low inductive layout and a low package height. It is suitable for demanding applications such as solar inverters and uninterruptible power supply systems. The module is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

This specific device is configured as a Three Level Inverter and includes an NTC Thermistor for temperature monitoring. It is available in a 42-PIM/Q2PACK (93x47) package and is designed for Chassis Mount installation.

NXH400N100H4Q2F2PG Quick Information

Product Type: IGBT Module
Canonical Name: On Semiconductor NXH400N100H4Q2F2PG Si/SiC Hybrid Module
Subcategory: Transistors - IGBTs - Modules

NXH400N100H4Q2F2PG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NXH400N100H4Q2F2PG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH400N100H4Q2F2PG Features

  • High-density Si/SiC hybrid IGBT module.
  • Extremely efficient Trench Field Stop technology.
  • Low switching loss reduces system power dissipation.
  • High power density module design.
  • Rated for 1000V and 409A continuous current.

NXH400N100H4Q2F2PG Applications

  • Suitable for solar inverter power modules.
  • Ideal for uninterruptible power supply systems.
  • Used in high-power industrial motor drives.
  • Applicable in high-voltage switching applications.
  • Suitable for high-current power conversion.

NXH400N100H4Q2F2PG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for this IGBT module?

The maximum collector-emitter voltage is 1000 V.

What is the continuous collector current rating at 80°C?

The continuous collector current is 409 A at 80°C for the outer IGBT.

What is the maximum power dissipation of this module?

The maximum power dissipation is 959 W at 150°C junction temperature.

What is the operating temperature range for this device?

The operating junction temperature range is -40°C to 175°C.

What type of IGBT technology does this module use?

This module uses Trench Field Stop technology.

How is this IGBT module mounted?

This module is designed for Chassis Mount installation.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

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