| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Forward Current | |
| Current | |
| Halogen Free | |
| IGBT Type | |
| Input | |
| Input Capacitance (Cies) @ Vce | |
| Mounting Type | |
| NTC Thermistor | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The NXH350N100H4Q2F2P1G from On Semiconductor is a high-density, integrated power module combining high-performance IGBTs with rugged anti-parallel diodes. It utilizes Trench Field Stop technology for enhanced efficiency and reduced power dissipation.
Key electrical specifications include a 1000V collector-emitter voltage and a continuous collector current of 303A at 80°C. The module offers a maximum power dissipation of 592W and features a Vce(on) of 2.3V at 15V/375A. It also includes an input capacitance of 24.146 nF at 20V.
This IGBT module operates within a junction temperature range of -40°C to 175°C. It is designed for applications such as solar inverters and uninterruptable power supplies (UPS) systems. The module is housed in a 42-PIM/Q2PACK package and features chassis mount.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status. The device is also Pb-Free and Halogen Free/BFR Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 1000 V.
The continuous collector current is 303 A at 80°C.
The maximum power dissipation is 592 W at 150°C junction temperature.
The operating junction temperature range is -40°C to 175°C.
Yes, it is RoHS3 Compliant.
It uses Trench Field Stop technology.
It is chassis mount.