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NXH200T120H3Q2F2SG The On Semiconductor NXH200T120H3Q2F2SG is a Si/SiC hybrid IGBT module designed for high efficiency applications. It features a 1200V collector-emitter voltage and 330A continuous current.
Mfr Part #:

NXH200T120H3Q2F2SG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NXH200T120H3Q2F2SG is a Si/SiC hybrid IGBT module designed for high efficiency applications. It features a 1200V collector-emitter voltage and 330A continuous current.
✓ Total Stock: 216 pcs
$ Price Range: $0.99

NXH200T120H3Q2F2SG Available from 1 distributor

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✓ Non-Authorised
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216 pcs
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NXH200T120H3Q2F2SG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
IGBT Type
Input
Input Capacitance (Cies) @ Vce
Mounting Type
NTC Thermistor
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Vce(on) (Max) @ Vge, Ic
Voltage
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NXH200T120H3Q2F2SG Description

Short technical summary and product information.

The On Semiconductor NXH200T120H3Q2F2SG is a power module containing a split T-type neutral point clamped three-level inverter. It integrates field-stop trench IGBTs and SiC diodes for reduced conduction and switching losses, enabling high efficiency and reliability.

 

Key electrical specifications include a 1200V collector-emitter voltage for the half bridge IGBTs and 650V for the neutral point IGBTs. The continuous collector current is rated at 330A at 25°C for the half bridge, with a maximum power dissipation of 679W. The module operates within a junction temperature range of -40°C to 175°C.

 

This module is designed for chassis mounting and comes in a 56-PIM/Q2PACK (93x47) package. Typical applications include solar inverters and uninterruptible power supplies, benefiting from its low inductive layout and pre-applied thermal interface material.

 

Features include solderable pins and an integrated thermistor. The module utilizes 1200V Ultra Field Stop IGBTs and 650V FS4 IGBTs, alongside 650V SiC diodes.

NXH200T120H3Q2F2SG Quick Information

Product Type: IGBT Module
Series: Split T-Type NPC Inverter
Canonical Name: On Semiconductor NXH200T120H3Q2F2SG Si/SiC Hybrid Module
Subcategory: Power Modules

NXH200T120H3Q2F2SG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NXH200T120H3Q2F2SG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH200T120H3Q2F2SG Features

  • Split T-type Neutral Point Clamped Inverter Module.
  • 1200V Ultra Field Stop IGBTs and 650V SiC Diodes.
  • 330A continuous collector current rating.
  • 679W maximum power dissipation.
  • Chassis mountable for thermal management.

NXH200T120H3Q2F2SG Applications

  • Suitable for solar inverters.
  • Used in uninterruptible power supplies.
  • Enables high efficiency designs.
  • Provides superior reliability.

NXH200T120H3Q2F2SG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the half bridge IGBTs?

The maximum collector-emitter voltage for the half bridge IGBTs is 1200V.

What is the continuous collector current at 25°C?

The continuous collector current at 25°C is 330A.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

How is this IGBT module mounted?

This IGBT module is chassis mounted.

What type of IGBTs and diodes are used in this module?

The module uses 1200V Ultra Field Stop IGBTs, 650V FS4 IGBTs, and 650V SiC Diodes.

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