NXH100B120H3Q0STG The On Semiconductor NXH100B120H3Q0STG is an IGBT module with a 1200V rating and 50A continuous current. It is designed for chassis mounting.
Mfr Part #:

NXH100B120H3Q0STG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NXH100B120H3Q0STG is an IGBT module with a 1200V rating and 50A continuous current. It is designed for chassis mounting.
✓ Total Stock: 126 pcs
$ Price Range: $0.99

NXH100B120H3Q0STG Available from 1 distributor

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✓ Non-Authorised
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NXH100B120H3Q0STG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
IGBT Type
Input
Input Capacitance (Cies) @ Vce
Mounting Type
NTC Thermistor
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Vce(on) (Max) @ Vge, Ic
Voltage

NXH100B120H3Q0STG Description

Short technical summary and product information.

The NXH100B120H3Q0STG from On Semiconductor is a power module featuring a dual boost stage with integrated field stop trench IGBTs and SiC Diodes. This module offers a 1200V collector-emitter voltage and a continuous collector current of 50A at TC < 102°C (TJ = 175°C). It has a maximum power dissipation of 186W at TC = 80°C (TJ = 175°C).

 

Designed for high efficiency and reliability, this IGBT module operates within a junction temperature range of -40°C to 150°C. It features a chassis mount type and comes in a PIM22 package.

 

Typical applications for this module include solar inverters, uninterruptible power supplies, and energy storage systems. The module incorporates a thermistor and offers options for solderable or press-fit pins, with this specific model likely featuring solderable pins based on the 'STG' suffix.

 

Key electrical specifications include a gate-emitter voltage of ±20V and an input capacitance of 9.075 nF @ 20V. The Vce(on) is rated at 2.3V maximum at 15V gate voltage and 50A collector current. The module also provides an isolation test voltage of 3000 VRMS for 1 second.

NXH100B120H3Q0STG Quick Information

Product Type: IGBT Module
Canonical Name: On Semiconductor NXH100B120H3Q0STG IGBT Module

NXH100B120H3Q0STG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NXH100B120H3Q0STG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH100B120H3Q0STG Features

  • 1200V collector-emitter voltage rating.
  • 50A continuous collector current capability.
  • 186W maximum power dissipation.
  • Chassis mount for easy integration.
  • Trench Field Stop IGBT technology.

NXH100B120H3Q0STG Applications

  • Used in industrial power conversion systems
  • Suitable for motor drive applications
  • Ideal for high-voltage switching circuits
  • Designed for thermal and electrical reliability

NXH100B120H3Q0STG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NXH100B120H3Q0STG?

The maximum collector-emitter voltage is 1200 V.

What is the continuous collector current rating?

The continuous collector current is 50 A at TC < 102°C (TJ = 175°C).

What is the operating temperature range?

The operating temperature range is -40°C to 150°C (TJ).

How is the NXH100B120H3Q0STG mounted?

This module is designed for chassis mounting.

What is the maximum power dissipation?

The maximum power dissipation is 186 W at TC = 80°C (TJ = 175°C).

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