Mfr Part #:

NXH100B120H3Q0SG

Q: What is the maximum power dissipation of the NXH100B120H3Q0SG?

The maximum power dissipation for the NXH100B120H3Q0SG is 186 W at TC = 80°C (TJ = 175°C).

Q: How is the NXH100B120H3Q0SG mounted?

The NXH100B120H3Q0SG is chassis mounted.

The On Semiconductor NXH100B120H3Q0SG is a 1200V IGBT power module. It offers a 61A continuous collector current and 186W maximum power dissipation.

✓ Total Stock: 216 pcs

$ Price Range: $0.99

NXH100B120H3Q0SG Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	216 pcs On Request	216 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NXH100B120H3Q0SG Description

Short technical summary and product information.

The NXH100B120H3Q0SG is a power module from On Semiconductor featuring a dual boost stage with integrated Field Stop Trench IGBTs and SiC Diodes. It operates at 1200V with a continuous collector current of 61A and a maximum power dissipation of 186W.

This module is designed for applications requiring high efficiency and reliability, such as solar inverters, uninterruptible power supplies, and energy storage systems. It features a chassis mount type and operates within a temperature range of -40°C to 150°C (TJ).

Key electrical specifications include a 1200V collector-emitter voltage, ±20V gate-emitter voltage, and a Vce(on) of 2.3V at 15V, 50A. The module also includes a 1200V peak repetitive reverse voltage for the boost diode and 1600V for bypass/anti-parallel diodes. The package is a 22-PIM/Q0BOOST (55x32.5).

Additional features include low reverse recovery and fast switching SiC diodes, low inductive layout, and a thermistor. Options for pre-applied thermal interface material are available.

NXH100B120H3Q0SG Quick Information

Product Type: Power Module

Canonical Name: NXH100B120H3Q0SG Power Module

Subcategory: IGBT Modules

NXH100B120H3Q0SG Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NXH100B120H3Q0SG Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH100B120H3Q0SG Features

1200V collector-emitter voltage rating.
61A continuous collector current capability.
186W maximum power dissipation.
Trench Field Stop IGBT technology.
Chassis mountable module package.

NXH100B120H3Q0SG Applications

Ideal for solar inverter designs.
Suitable for uninterruptible power supplies.
Used in energy storage systems.
High efficiency power conversion.

NXH100B120H3Q0SG FAQs

5 frequently asked questions generated from this part’s specifications.

What is the operating temperature range for the NXH100B120H3Q0SG?

The operating temperature range for the NXH100B120H3Q0SG is -40°C to 150°C (TJ).

What is the maximum collector-emitter voltage of the NXH100B120H3Q0SG?

The maximum collector-emitter voltage for the NXH100B120H3Q0SG is 1200 V.

What is the continuous collector current for the NXH100B120H3Q0SG?

The continuous collector current for the NXH100B120H3Q0SG is 61 A at TC < 80°C (TJ = 175°C).

What is the maximum power dissipation of the NXH100B120H3Q0SG?