| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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174 pcs
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174 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| IGBT Type | |
| Input | |
| Input Capacitance (Cies) @ Vce | |
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| NTC Thermistor | |
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| Tape & Reel | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The NXH100B120H3Q0PTG from onsemi is a high-efficiency power module designed for demanding applications. It integrates 1200 V Ultra Field Stop IGBTs and fast-switching SiC Diodes, offering reduced conduction and switching losses.
This module boasts a 1200 V collector-emitter voltage and a continuous collector current of 50 A at TC < 102°C, with a maximum power dissipation of 186 W. It also includes 1600 V bypass and anti-parallel diodes.
The NXH100B120H3Q0PTG is suitable for typical applications such as solar inverters, uninterruptible power supplies, and energy storage systems. It features a Chassis Mount package with a 22-PIM (55x32.5) supplier device package, and operates within a junction temperature range of -40°C to 150°C.
Key specifications include a Vce(on) of 2.3V at 15V/50A and an input capacitance (Cies) of 9.075 nF at 20V. The module is designed with solderable or press-fit pin options and includes a thermistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the NXH100B120H3Q0PTG is 1200 V.
The continuous collector current is 50 A at TC < 102°C (TJ = 175°C).
The maximum power dissipation is 186 W at TC = 80°C (TJ = 175°C).
The operating junction temperature range is -40°C to 150°C.
This IGBT module is designed for Chassis Mount.
It utilizes Trench Field Stop IGBT technology.