| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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504 pcs
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504 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| NTC Thermistor | |
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| Tape & Reel | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The NXH100B120H3Q0PG from On Semiconductor is a power module featuring a dual boost stage with integrated field stop trench IGBTs and SiC diodes. It offers a 1200V collector-emitter voltage and a continuous collector current of 61A at TC < 80°C.
This module has a maximum power dissipation of 186W and operates within a junction temperature range of -40°C to 150°C. It includes a 1200V peak repetitive reverse voltage for the boost diode and a 1600V rating for bypass and anti-parallel diodes.
The NXH100B120H3Q0PG is suitable for applications such as solar inverters, uninterruptible power supplies, and energy storage systems. It features a chassis mount package and a supplier device package of 22-PIM (55x32.5).
Key electrical characteristics include a Vce(on) of 2.3V at 15V/50A and an input capacitance of 9.075 nF at 20V. The module also incorporates a thermistor and offers options for pre-applied thermal interface material.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200 V.
The continuous collector current is 61 A at TC < 80°C (TJ = 175°C).
The maximum power dissipation is 186 W at TC = 80°C (TJ = 175°C).
The operating junction temperature range is -40°C to 150°C.
The NXH100B120H3Q0PG is chassis mounted.