| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
84 pcs
|
84 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Creepage Distance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Isolation Test Voltage | |
| Maximum power dissipation | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Topology | |
| Vgs(th) (Max) @ Id | |
| Voltage Gate Source (Minimum/Maximum) |
The NXH040P120MNF1PTG is a power module from On Semiconductor, utilizing Silicon Carbide (SiC) technology. This module contains a 1200V, 40 mOhm SiC MOSFET half bridge and a thermistor, housed in an F1 package.
Key electrical specifications include a Drain-Source Voltage (Vdss) of 1200V, a maximum continuous drain current of 30A at 80°C, and a low on-state resistance (Rds On) of 56mOhm at 25A and 20V.
Designed for demanding applications, this module operates within a junction temperature range of -40°C to 150°C. It features press-fit pins for secure mounting and is suitable for applications such as solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vdss) is 1200V.
The Rds On is a maximum of 56mOhm at 25A and 20V.
The module operates between -40°C and 150°C (TJ).
This component is supplied in a Module package.
It is designed for chassis mounting.