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NXH040F120MNF1PTG The ON Semiconductor NXH040F120MNF1PTG is a 1200V Silicon Carbide (SiC) MOSFET module. It features a 40 mohm resistance and is housed in an F1 package.
Mfr Part #:

NXH040F120MNF1PTG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NXH040F120MNF1PTG is a 1200V Silicon Carbide (SiC) MOSFET module. It features a 40 mohm resistance and is housed in an F1 package.
Total Stock: 28 pcs
$ Price Range: $0.99

NXH040F120MNF1PTG Available from 1 distributor

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Non-Authorised
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28 pcs
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NXH040F120MNF1PTG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Creepage Distance
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Isolation Test Voltage
Maximum Operating Junction Temperature
Minimum Operating Junction Temperature
Mounting Type
Operating Temperature
Power
Power Dissipation Max (Maximum @ Tj = 175 °C)
Press-Fit Pins
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Storage Temperature Range
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
Voltage Gate Source (Minimum/Maximum)

NXH040F120MNF1PTG Description

Short technical summary and product information.

The NXH040F120MNF1PTG is a power module from ON Semiconductor, utilizing Silicon Carbide (SiC) technology. This module is designed with a full bridge topology and operates at 1200V, offering a low on-state resistance of 40 mΩ.

 

Key electrical specifications include a continuous drain current of 30A at 80°C and a maximum power dissipation of 113W. The operating junction temperature ranges from -40°C to 175°C. The module is equipped with press-fit pins for mounting.

 

Typical applications for this SiC MOSFET module include solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power systems. It is RoHS compliant and Halide free.

 

The module is packaged in the F1 package, specifically the 22-PIM (33.8x42.5) variant, and is designed for chassis mounting.

NXH040F120MNF1PTG Quick Information

Product Type: MOSFET Module
Series: F1 Package
Canonical Name: NXH040F120MNF1PTG Silicon Carbide (SiC) MOSFET Module, 1200V, 40 mohm
Subcategory: Silicon Carbide (SiC) MOSFET Module

NXH040F120MNF1PTG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NXH040F120MNF1PTG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH040F120MNF1PTG Features

  • 1200V Silicon Carbide MOSFET module.
  • 40 mohm on-state resistance.
  • 30A continuous drain current.
  • F1 package, chassis mount.
  • RoHS and Halide free compliant.

NXH040F120MNF1PTG Applications

  • Suitable for solar inverters.
  • Used in uninterruptible power supplies.
  • Ideal for EV charging stations.
  • Applicable to industrial power.

NXH040F120MNF1PTG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NXH040F120MNF1PTG?

The maximum drain-source voltage is 1200V.

What is the operating temperature range of this MOSFET module?

The operating temperature range is -40°C to 175°C.

What is the on-state resistance (Rds On) of the NXH040F120MNF1PTG?

The Rds On is a maximum of 56mOhm at 25A, 20V.

Is the NXH040F120MNF1PTG RoHS compliant?

Yes, the device is RoHS3 Compliant.

What type of package is the NXH040F120MNF1PTG in?

It is in the F1 Package, specifically the 22-PIM (33.8x42.5) supplier device package.

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