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NXH040F120MNF1PG The On Semiconductor NXH040F120MNF1PG is a 1200V, 40mOhm Silicon Carbide (SiC) MOSFET module featuring a full bridge topology. It is designed for chassis mounting in an F1 package.
Mfr Part #:

NXH040F120MNF1PG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NXH040F120MNF1PG is a 1200V, 40mOhm Silicon Carbide (SiC) MOSFET module featuring a full bridge topology. It is designed for chassis mounting in an F1 package.
Total Stock: 56 pcs
$ Price Range: $0.99

NXH040F120MNF1PG Available from 1 distributor

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Non-Authorised
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56 pcs
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NXH040F120MNF1PG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Continuous Drain Current @ TC = 80°C
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Gate To Source Voltage (Minimum/Maximum)
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Isolation Test Voltage
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Tj = 175 °C)
Power Dissipation (Maximum)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Storage Temperature Range
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NXH040F120MNF1PG Description

Short technical summary and product information.

This Silicon Carbide (SiC) MOSFET module from On Semiconductor, part number NXH040F120MNF1PG, offers a 1200V drain-source voltage and a low on-resistance of 40mOhm. It utilizes a full bridge topology and is built with EliteSiC technology.

 

The module is rated for a continuous drain current of 30A at 80°C and a maximum power dissipation of 113W. It operates within a junction temperature range of -40°C to 175°C. The device is Pb-Free, Halide Free, and RoHS Compliant.

 

Designed for robust applications, this module is suitable for solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power systems. It features press-fit pins for secure mounting and includes a thermistor for temperature monitoring. The F1 package (22-PIM) measures 33.8x42.5mm and is designed for chassis mounting.

NXH040F120MNF1PG Quick Information

Product Type: MOSFET Module
Series: F1 Package
Canonical Name: On Semiconductor NXH040F120MNF1PG Silicon Carbide MOSFET Module
Subcategory: Silicon Carbide (SiC) Full Bridge

NXH040F120MNF1PG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NXH040F120MNF1PG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH040F120MNF1PG Features

  • 1200V Silicon Carbide MOSFET module
  • 40mOhm on-resistance
  • Full bridge topology
  • Chassis mount F1 package
  • RoHS3 Compliant

NXH040F120MNF1PG Applications

  • Suitable for solar inverters
  • Used in uninterruptible power supplies
  • Ideal for EV charging stations
  • Designed for industrial power

NXH040F120MNF1PG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for this MOSFET module?

The maximum drain-source voltage is 1200V (1.2kV).

What is the on-resistance of the NXH040F120MNF1PG module?

The maximum on-resistance is 56mOhm at 25A drain current and 20V gate-source voltage.

What is the operating temperature range for this module?

The operating temperature range is -40°C to 175°C (TJ).

What type of package does the NXH040F120MNF1PG use?

It uses the F1 Package, specifically the 22-PIM (33.8x42.5) supplier device package.

How is this MOSFET module mounted?

The mounting type is Chassis Mount.

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