| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
112 pcs
|
112 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current | |
| Creepage Distance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Isolation Test Voltage | |
| Maximum power dissipation | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature Range | |
| Technology | |
| Vgs(th) (Max) @ Id |
This On Semiconductor NXH020P120MNF1PG is a Silicon Carbide (SiC) power module featuring a 2-pack half-bridge topology. It operates at a Drain-Source Voltage (Vdss) of 1200V and offers a low on-resistance (Rds On) of 30mOhm at 50A and 20V gate-source voltage. The module has a continuous drain current rating of 51A at 80°C and a maximum power dissipation of 211W at 80°C.
Designed for demanding applications, this module includes a thermistor and is available with or without pre-applied Thermal Interface Material (TIM). It utilizes press-fit pins for secure mounting and has a chassis mount type. The operating temperature range is -40°C to 150°C (TJ).
Typical applications for this SiC MOSFET module include solar inverters, uninterruptible power supplies, electric vehicle charging stations, and other industrial power systems requiring high efficiency and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for this module is 1200V.
The Rds On is a maximum of 30mOhm at an Id of 50A and Vgs of 20V.
The operating temperature range is -40°C to 150°C (TJ).
This module is designed for chassis mounting.
This module uses Silicon Carbide (SiC) technology.