NXH020F120MNF1PTG The On Semiconductor NXH020F120MNF1PTG is a Silicon Carbide MOSFET power module. It features a 1200V drain-source voltage and 20mOhm on-resistance.
Mfr Part #:

NXH020F120MNF1PTG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NXH020F120MNF1PTG is a Silicon Carbide MOSFET power module. It features a 1200V drain-source voltage and 20mOhm on-resistance.
✓ Total Stock: 2,632 pcs
$ Price Range: $0.99

NXH020F120MNF1PTG Available from 1 distributor

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✓ Non-Authorised
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2,632 pcs
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NXH020F120MNF1PTG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NXH020F120MNF1PTG Description

Short technical summary and product information.

The NXH020F120MNF1PTG is a power module from On Semiconductor, utilizing Silicon Carbide (SiC) MOSFET technology. This module is designed for high-performance applications, offering a 1200V drain-source voltage and a low on-resistance of 30mOhm at 50A and 20V gate-source voltage.

 

It operates within a junction temperature range of -40°C to 175°C and has a continuous drain current rating of 51A at 80°C case temperature. The module is housed in a 22-PIM package with chassis mount capability, suitable for demanding industrial power applications.

 

Typical applications for this module include solar inverters, uninterruptible power supplies, electric vehicle charging stations, and other industrial power systems. The module also includes a thermistor for temperature monitoring and is Pb-free and Halide-free, complying with RoHS standards.

NXH020F120MNF1PTG Quick Information

Product Type: Power Module
Canonical Name: On Semiconductor NXH020F120MNF1PTG Silicon Carbide MOSFET Power Module
Subcategory: Silicon Carbide (SiC) MOSFET

NXH020F120MNF1PTG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NXH020F120MNF1PTG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH020F120MNF1PTG Features

  • 1200V Silicon Carbide MOSFET power module.
  • Low 30mOhm on-resistance at 50A.
  • 51A continuous drain current rating.
  • Operates from -40°C to 175°C.
  • 22-PIM package with chassis mount.

NXH020F120MNF1PTG Applications

  • Ideal for solar inverter systems.
  • Suitable for uninterruptible power supplies.
  • Used in electric vehicle charging stations.
  • Applicable for industrial power systems.

NXH020F120MNF1PTG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for this MOSFET module?

The maximum drain-source voltage is 1200V (1.2kV).

What is the on-resistance of the NXH020F120MNF1PTG module?

The maximum on-resistance is 30mOhm at 50A drain current and 20V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current is 51A at 80°C case temperature.

What is the operating temperature range for this module?

The operating junction temperature range is -40°C to 175°C.

What package type is the NXH020F120MNF1PTG module supplied in?

The module is supplied in a 22-PIM package with chassis mount capability.

Is this module RoHS compliant?

Yes, this module is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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