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NXH020F120MNF1PG The NXH020F120MNF1PG is a 1200V, 20mOhm Silicon Carbide MOSFET full bridge power module from ON Semiconductor. It features a press-fit F1 package and is suitable for high-power applications.
Mfr Part #:

NXH020F120MNF1PG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NXH020F120MNF1PG is a 1200V, 20mOhm Silicon Carbide MOSFET full bridge power module from ON Semiconductor. It features a press-fit F1 package and is suitable for high-power applications.
✓ Total Stock: 28 pcs
$ Price Range: $0.99

NXH020F120MNF1PG Available from 1 distributor

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✓ Non-Authorised
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28 pcs
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NXH020F120MNF1PG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id
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NXH020F120MNF1PG Description

Short technical summary and product information.

The ON Semiconductor NXH020F120MNF1PG is a high-performance power module utilizing Silicon Carbide (SiC) technology. It integrates a 1200V, 20mOhm SiC MOSFET full bridge configuration within an F1 package, designed for demanding power applications.

 

Key electrical specifications include a 1200V drain-source voltage, 51A continuous drain current at 80°C, and a low on-resistance of 30mOhm at 50A and 20V. The module also incorporates a thermistor for temperature monitoring.

 

Designed for robust performance, this module operates within a junction temperature range of -40°C to 175°C. The F1 package utilizes press-fit pins for secure mounting, and the module is RoHS and Halide free.

 

Typical applications for the NXH020F120MNF1PG include solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and various industrial power systems.

NXH020F120MNF1PG Quick Information

Product Type: Power Module
Canonical Name: NXH020F120MNF1PG Silicon Carbide (SiC) Module - EliteSiC, 20 mohm, 1200 V, 4-PACK Full Bridge Topology, F1 Package
Subcategory: Full Bridge

NXH020F120MNF1PG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NXH020F120MNF1PG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH020F120MNF1PG Features

  • 1200V Silicon Carbide MOSFET full bridge.
  • Low 20mOhm on-resistance.
  • 51A continuous drain current.
  • F1 package with press-fit pins.
  • Suitable for solar and EV applications.

NXH020F120MNF1PG Applications

  • Ideal for solar inverters.
  • Used in uninterruptible power supplies.
  • Powers electric vehicle charging stations.
  • Suitable for industrial power systems.

NXH020F120MNF1PG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the NXH020F120MNF1PG?

1200V (1.2kV)

What is the maximum gate-to-source voltage for this device?

+25/-15 V

What is the continuous drain current at 80°C?

51 A

What is the maximum power dissipation at TJ = 175°C?

211 W

What is the operating temperature range of the NXH020F120MNF1PG?

-40°C to 175°C

Is the device RoHS compliant?

Yes, RoHS3 compliant

What package type is used for this module?

F1 Package

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