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NXH010P90MNF1PG The ON Semiconductor NXH010P90MNF1PG is a 900V Silicon Carbide (SiC) Half Bridge power module. It offers a low 10mOhm on-resistance and high current handling capabilities.
Mfr Part #:

NXH010P90MNF1PG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NXH010P90MNF1PG is a 900V Silicon Carbide (SiC) Half Bridge power module. It offers a low 10mOhm on-resistance and high current handling capabilities.
Total Stock: 28 pcs
$ Price Range: $0.99

NXH010P90MNF1PG Available from 1 distributor

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Non-Authorised
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NXH010P90MNF1PG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Case
Configuration
Continuous Drain Current @ TC = 80°C (TJ = 175°C)
Creepage Distance
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Gate to Source Voltage (Vgs)
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Isolation test voltage, t = 1 s, 60 Hz
Maximum Power Dissipation @ TC = 80°C (TJ = 175°C)
Medical Grade
Military Grade
Module Operating Junction Temperature
Mounting Type
Operating Temperature
Power
Pulsed Drain Current (TJ = 175°C)
Rds On (Max) @ Id, Vgs
Storage Temperature Range
Tape & Reel
Technology
Topology
Vgs(th) (Max) @ Id

NXH010P90MNF1PG Description

Short technical summary and product information.

The ON Semiconductor NXH010P90MNF1PG is a high-performance power module featuring a Silicon Carbide (SiC) MOSFET Half Bridge topology. This module is rated for 900V drain-source voltage and offers a low on-resistance of 14mOhm at 100A and 15V gate-source voltage.

 

With a continuous drain current of 154A at 80°C and a maximum power dissipation of 328W, this module is designed for demanding applications. It operates within a junction temperature range of -40°C to 150°C and includes a thermistor for temperature monitoring.

 

The module utilizes an F1 package with press-fit pins, suitable for chassis mounting. Its SiC technology provides superior performance characteristics compared to traditional silicon MOSFETs, making it ideal for applications requiring high efficiency and power density.

 

Typical applications include solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and industrial power systems. The module also features a high isolation test voltage of 4800 VRMS.

NXH010P90MNF1PG Quick Information

Product Type: Power Module
Series: NXH010P90MNF1PG
Canonical Name: NXH010P90MNF1PG Silicon Carbide (SiC) Half Bridge Power Module
Subcategory: Half Bridge

NXH010P90MNF1PG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NXH010P90MNF1PG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH010P90MNF1PG Features

  • 900V Silicon Carbide Half Bridge module.
  • Low 14mOhm Rds(on) at 100A.
  • 154A continuous drain current capability.
  • 328W maximum power dissipation.
  • F1 package with chassis mount.

NXH010P90MNF1PG Applications

  • Suitable for solar inverters.
  • Used in uninterruptible power supplies.
  • Ideal for EV charging stations.
  • Applicable to industrial power.

NXH010P90MNF1PG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for this module?

The maximum drain-source voltage (Vdss) is 900V.

What is the Rds On (Max) for the NXH010P90MNF1PG?

The Rds On (Max) is 14mOhm at a drain current of 100A and gate-source voltage of 15V.

What is the continuous drain current rating?

The continuous drain current is 154A at a case temperature of 80°C.

What is the operating temperature range?

The operating temperature range is -40°C to 150°C (TJ).

What type of package does this module use?

This module uses the F1 package, which is suitable for chassis mounting.

What technology is used in this power module?

This module uses Silicon Carbide (SiC) technology.

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