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NXH010P120MNF1PTNG The On Semiconductor NXH010P120MNF1PTNG is a 1200V Silicon Carbide (SiC) MOSFET half-bridge power module. It features a low 14mOhm RdsOn and is designed for chassis mounting.
Mfr Part #:

NXH010P120MNF1PTNG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NXH010P120MNF1PTNG is a 1200V Silicon Carbide (SiC) MOSFET half-bridge power module. It features a low 14mOhm RdsOn and is designed for chassis mounting.
Total Stock: 1,148 pcs
$ Price Range: $0.99

NXH010P120MNF1PTNG Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,148 pcs
1148 pcs On Request 1 On Request On Request On Request On Request On Request

NXH010P120MNF1PTNG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Continuous Drain Current @ TC = 80°C (TJ = 175°C)
Creepage Distance
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Isolation Test Voltage, t = 1 sec, 60 Hz
Maximum Operating Junction Temperature
Minimum Operating Junction Temperature
Mounting Type
Operating Temperature
Power
Power Dissipation Max (Maximum @ Tc = 80 °C (TJ = 175 °C)
Power Dissipation Max (Maximum @ Tj)
Pulsed Drain Current (TJ = 175°C)
Rds On (Max) @ Id, Vgs
Storage Temperature Range
Technology
Vgs(th) (Max) @ Id
Voltage Gate Source (Minimum/Maximum)

NXH010P120MNF1PTNG Description

Short technical summary and product information.

This power module from On Semiconductor, part number NXH010P120MNF1PTNG, utilizes Silicon Carbide (SiC) technology to deliver high performance in a 1200V rating. It integrates a 2-pack half-bridge topology with a low on-resistance of 14mOhm at 100A and 20V Vgs.

 

The module is designed for demanding applications and offers a continuous drain current of 114A at 80°C case temperature. It operates within a junction temperature range of -40°C to 175°C and features a chassis mount for robust integration into systems.

 

Key electrical characteristics include a maximum power dissipation of 413W at 80°C case temperature and an isolation test voltage of 4800 VRMS. The module also includes a thermistor for temperature monitoring.

 

Typical applications for this SiC MOSFET module include solar inverters, uninterruptible power supplies, electric vehicle charging stations, and other industrial power systems requiring efficient and reliable power conversion.

NXH010P120MNF1PTNG Quick Information

Product Type: Power Module
Series: NXH010P120MNF1PTNG
Canonical Name: NXH010P120MNF1PTNG Silicon Carbide (SiC) Module
Subcategory: Half-Bridge

NXH010P120MNF1PTNG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NXH010P120MNF1PTNG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH010P120MNF1PTNG Features

  • 1200V Silicon Carbide MOSFET half-bridge.
  • Low 14mOhm RdsOn at 100A.
  • 114A continuous drain current capability.
  • Chassis mount for robust integration.
  • Wide -40°C to 175°C operating temperature.

NXH010P120MNF1PTNG Applications

  • Ideal for solar inverter designs.
  • Suitable for EV charging stations.
  • Used in uninterruptible power supplies.
  • Applicable to industrial power systems.

NXH010P120MNF1PTNG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the NXH010P120MNF1PTNG?

1200V (1.2kV)

What is the maximum continuous drain current at Tc = 80°C?

114A (Tc)

What is the Rds On (Max) at Id = 100A and Vgs = 20V?

14mOhm @ 100A, 20V

What is the package type of this device?

Chassis Mount

What is the maximum operating junction temperature?

175°C

Is this device RoHS compliant?

RoHS3 Compliant

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