| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
168 pcs
|
168 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Case Code | |
| Configuration | |
| Creepage Distance | |
| Current | |
| Current Continuous Drain (@ Tc = 80 °C (TJ = 175 °C) | |
| Current Continuous Drain (@ Tc = 80 °C) | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Voltage | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Isolation Test Voltage | |
| Maximum Operating Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Minimum Operating Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation Max (Maximum @ Tc = 80 °C (TJ = 175 °C) | |
| Power Dissipation Max (Maximum @ Tj = 175 °C) | |
| Pulsed Drain Current (TJ = 175°C) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature Range | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Voltage Drain Source |
This NXH010P120MNF1PTG power module from On Semiconductor utilizes Silicon Carbide (SiC) technology to deliver high performance in a half-bridge configuration. It features a 1200V drain-source voltage rating and a continuous drain current capability of 114A at 80°C case temperature.
The module boasts a low on-state resistance (Rds On) of 10 mOhm at 100A and 20V gate-source voltage, contributing to efficient power conversion. It operates within a wide temperature range of -40°C to 150°C (junction temperature) and includes a thermistor for temperature monitoring.
Designed for robust applications, the NXH010P120MNF1PTG is suitable for use in solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power systems. Its F1 package with press-fit pins facilitates chassis mounting for effective thermal management.
Key electrical characteristics include a gate charge of 454nC and a gate threshold voltage of 4.3V. The module also provides an isolation test voltage of 4800 VRMS and a creepage distance of 12.7mm, ensuring reliable operation in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 1200V.
The Rds On is a maximum of 14mOhm at 100A and 20V gate-source voltage.
The continuous drain current is 114A at a case temperature of 80°C.
The operating temperature range is -40°C to 150°C (junction temperature).
This module uses Silicon Carbide (SiC) technology.
It is an F1 package module designed for chassis mounting.