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NXH010P120MNF1PNG The NXH010P120MNF1PNG is a 1200V Silicon Carbide (SiC) MOSFET half bridge power module from ON Semiconductor. It features a 10 mohm Rds On and is designed for chassis mounting.
Mfr Part #:

NXH010P120MNF1PNG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NXH010P120MNF1PNG is a 1200V Silicon Carbide (SiC) MOSFET half bridge power module from ON Semiconductor. It features a 10 mohm Rds On and is designed for chassis mounting.
Total Stock: 196 pcs
$ Price Range: $0.99

NXH010P120MNF1PNG Available from 1 distributor

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Non-Authorised
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196 pcs
196 pcs On Request 1 On Request On Request On Request On Request On Request

NXH010P120MNF1PNG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Continuous Drain Current @ TC = 80°C (TJ = 175°C)
Creepage Distance
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Isolation Test Voltage, t = 1 sec, 60 Hz
Maximum Operating Junction Temperature
Maximum Power Dissipation @ TC = 80°C (TJ = 175°C)
Minimum Operating Junction Temperature
Mounting Type
Operating Temperature
Power
Pulsed Drain Current (TJ = 175°C)
Rds On (Max) @ Id, Vgs
Storage Temperature Range
Technology
Vgs(th) (Max) @ Id
Voltage Gate Source

NXH010P120MNF1PNG Description

Short technical summary and product information.

The NXH010P120MNF1PNG is a high-performance power module from ON Semiconductor, utilizing Silicon Carbide (SiC) technology. This module integrates a 1200V, 10 mohm SiC MOSFET half bridge configuration, making it suitable for demanding power applications.

 

Key electrical specifications include a continuous drain current of 114A at 80°C and a maximum power dissipation of 413W. The module operates within a junction temperature range of -40°C to 175°C. It is designed for chassis mounting and comes in an F1 package.

 

Typical applications for this module include solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power systems. The SiC technology offers advantages such as higher efficiency and better thermal performance compared to traditional silicon-based devices.

NXH010P120MNF1PNG Quick Information

Product Type: SiC MOSFET Half Bridge Module
Canonical Name: NXH010P120MNF1PNG Silicon Carbide (SiC) Module - EliteSiC, 10 mohm, 1200 V, 2-PACK Half Bridge Topology, F1 Package
Subcategory: SiC MOSFET Half Bridge

NXH010P120MNF1PNG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NXH010P120MNF1PNG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH010P120MNF1PNG Features

  • 1200V Silicon Carbide MOSFET Half Bridge.
  • 10 mohm maximum Rds On.
  • 114A continuous drain current.
  • Chassis mountable F1 package.
  • Suitable for high-power applications.

NXH010P120MNF1PNG Applications

  • Ideal for solar inverters.
  • Used in uninterruptible power supplies.
  • Suitable for EV charging stations.
  • Designed for industrial power.

NXH010P120MNF1PNG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NXH010P120MNF1PNG?

The maximum drain-source voltage is 1200V (1.2kV).

What is the Rds On (Max) for this SiC MOSFET module?

The Rds On (Max) is 14mOhm at a drain current of 100A and gate-source voltage of 20V.

What is the operating temperature range for the NXH010P120MNF1PNG?

The operating junction temperature range is -40°C to 175°C.

What type of package does the NXH010P120MNF1PNG use?

The module is supplied in an F1 package.

Is the NXH010P120MNF1PNG RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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