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NXH010P120MNF1PG The ON Semiconductor NXH010P120MNF1PG is a 1200V Silicon Carbide (SiC) MOSFET half bridge power module. It features a 10 mOhm resistance and is designed for chassis mounting.
Mfr Part #:

NXH010P120MNF1PG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NXH010P120MNF1PG is a 1200V Silicon Carbide (SiC) MOSFET half bridge power module. It features a 10 mOhm resistance and is designed for chassis mounting.
Total Stock: 56 pcs
$ Price Range: $0.99

NXH010P120MNF1PG Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
56 pcs
56 pcs On Request 1 On Request On Request On Request On Request On Request

NXH010P120MNF1PG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Continuous Drain Current @ TC = 80°C (TJ = 175°C)
Creepage Distance
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Isolation Test Voltage, t = 1 sec, 60 Hz
Maximum Operating Junction Temperature
Maximum Power Dissipation @ TC = 80°C (TJ = 175°C)
Minimum Operating Junction Temperature
Mounting Type
Operating Temperature
Power
Pulsed Drain Current (TJ = 175°C)
Rds On (Max) @ Id, Vgs
Storage Temperature
Storage Temperature Range
Tape & Reel
Technology
Topology
Vgs(th) (Max) @ Id
Voltage Gate Source

NXH010P120MNF1PG Description

Short technical summary and product information.

The ON Semiconductor NXH010P120MNF1PG is a power module incorporating a 1200V Silicon Carbide (SiC) MOSFET half bridge and a thermistor within an F1 package. This module offers a low on-resistance of 10 mOhm, making it suitable for high-power applications.

 

Key electrical specifications include a continuous drain current of 114A at 80°C and a maximum operating junction temperature of 175°C. The module supports a drain-source voltage of 1200V and features a 2 N-Channel (Dual) Common Source configuration.

 

Designed for robust performance, the NXH010P120MNF1PG is suitable for demanding environments. Its chassis mount type facilitates integration into various systems. Typical applications include solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power systems.

NXH010P120MNF1PG Quick Information

Product Type: Power Module
Canonical Name: On Semiconductor NXH010P120MNF1PG Silicon Carbide MOSFET Half Bridge Module
Subcategory: Half Bridge

NXH010P120MNF1PG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NXH010P120MNF1PG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NXH010P120MNF1PG Features

  • 1200V Silicon Carbide MOSFET Half Bridge
  • 10 mOhm maximum on-resistance
  • 114A continuous drain current
  • 175°C maximum operating junction temperature
  • Chassis mountable module package

NXH010P120MNF1PG Applications

  • Suitable for solar inverters
  • Used in uninterruptible power supplies
  • Ideal for EV charging stations
  • Applicable to industrial power systems

NXH010P120MNF1PG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NXH010P120MNF1PG?

The maximum drain-source voltage is 1200V.

What is the maximum continuous drain current?

The maximum continuous drain current is 114A at 80°C.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

What is the on-resistance of this MOSFET module?

The maximum on-resistance is 14mOhm at 100A and 20V.

How is the NXH010P120MNF1PG mounted?

This module is designed for chassis mounting.

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