| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,940 pcs
|
2940 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,023 pcs
|
1023 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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This power module from On Semiconductor, part number NXH006P120MNF2PTG, utilizes Silicon Carbide (SiC) MOSFET technology. It is configured as a half-bridge inverter, suitable for demanding power applications.
The module boasts a high drain-source voltage rating of 1200V and a continuous drain current capability of 304A at 80°C case temperature. It also features a maximum power dissipation of 950W at 175°C junction temperature and a short circuit withstand time of 2.0 µs.
Designed for robust performance, the NXH006P120MNF2PTG operates within a junction temperature range of -40°C to a maximum specified value. The module is housed in an F2 package and is designed for chassis mounting, facilitating integration into power systems.
Typical applications for this module include solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power systems. It is RoHS and Halide free, indicating compliance with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 1200 V.
The continuous drain current is 304 A at a case temperature of 80°C and junction temperature of 175°C.
The typical on-resistance is 6 mΩ.
The module is in an F2 package and is designed for chassis mounting.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.