| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage | |
| Supplier Device Package | |
| Technology | |
| Write Cycle Time |
The Kioxia America, Inc. TC58BVG1S3HTAI0 is a high-performance 2 Gbit non-volatile memory component utilizing FLASH NAND (SLC) technology. It features a parallel interface and a memory organization of 256M x 8, offering a fast access time of 25 ns and a write cycle time of 25 ns.
Designed for a wide range of applications, this memory chip operates within a supply voltage range of 2.7V to 3.6V. The device is specified for operation across an extended temperature range of -40°C to 85°C (TA), making it suitable for demanding environments. It is available in a 48-TSOP I package, designed for surface mounting.
Compliance information indicates ROHS3 compliance, REACH unaffected status, and an MSL rating of 3 (168 Hours). The component is manufactured by Kioxia America, Inc. and is part of the Benand™ series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 2 Gbit.
It is a Non-Volatile Memory in FLASH format, specifically FLASH - NAND (SLC) technology.
The memory organization is 256M x 8.
The memory interface is Parallel.
The access time is 25 ns and the write cycle time is 25 ns.
The supply voltage ranges from 2.7V to 3.6V.
It operates in the temperature range of -40°C to 85°C.