BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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8,508 pcs
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8508 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
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660 pcs
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660 pcs | On Request | 1 | On Request | On Request | 1738+ | On Request | On Request | |
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244 pcs
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244 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| SVHC Present |
The NX7002BKS from NXP Semiconductors is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This component is designed for applications requiring high-speed switching and logic-level compatibility.
Key electrical characteristics include a drain-source voltage of 60V and a typical drain-source on-state resistance of 2.2 Ohms at 10V gate-source voltage and 200mA drain current. It offers very fast switching capabilities and ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM.
The device is supplied in a very small SOT363 (SC-88) surface-mounted plastic package, making it suitable for space-constrained designs. Its applications include relay drivers, high-speed line drivers, and low-side load switches.
Features like logic-level compatibility and Trench MOSFET technology contribute to its performance in various switching circuits.
The maximum drain-source voltage (VDS) is 60V.
The continuous drain current (ID) is 330mA at VGS=10V and Tsp=25°C, and 240mA at Tamb=25°C on an FR4 PCB.
The typical drain-source on-state resistance (RDSon) is 2.2Ω, with a maximum of 2.8Ω at VGS=10V and ID=200mA.
The NX7002BKS is available in a SOT363 (TSSOP6) surface-mount package.
The junction temperature range is -55°C to 150°C.
