NX7002BKR The NXP Semiconductors NX7002BKR is an N-Channel MOSFET with a 60V drain-to-source voltage and 270mA continuous drain current. It is supplied in a surface mount TO-236AB package.
Mfr Part #:

NX7002BKR

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors NX7002BKR is an N-Channel MOSFET with a 60V drain-to-source voltage and 270mA continuous drain current. It is supplied in a surface mount TO-236AB package.
✓ Total Stock: 1,352 pcs
$ Price Range: $0.99

NX7002BKR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,295 pcs
1295 pcs On Request 1 On Request On Request 2104+ On Request On Request
Non-Authorised Inventory information
57 pcs
57 pcs On Request 1 On Request On Request On Request On Request On Request

NX7002BKR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NX7002BKR Description

Short technical summary and product information.

The NX7002BKR from NXP Semiconductors is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 270mA at 25°C ambient temperature. The Rds On is specified at a maximum of 2.8 Ohms at 200mA drain current and 10V gate-source voltage.

 

This MOSFET operates with drive voltages of 5V and 10V. Its threshold voltage (Vgs(th)) is a maximum of 2.1V at 250µA. The input capacitance (Ciss) is a maximum of 23.6 pF at 10V drain-source voltage, and the gate charge (Qg) is a maximum of 1 nC at 10V gate-source voltage. The maximum gate-source voltage (Vgs) is ±20V.

 

With a power dissipation of 310mW (Ta) and 1.67W (Tc), the NX7002BKR is suitable for applications requiring moderate power handling. It operates within a temperature range of -55°C to 150°C (TJ). The component is housed in a TO-236AB surface mount package, specifically TO-236-3, SC-59, or SOT-23-3, and is supplied in Tape & Reel or Cut Tape packaging with a standard package quantity of 3000 units.

NX7002BKR Quick Information

Product Type: N-Channel MOSFET
Series: NX7002
Canonical Name: NX7002BKR N-Channel MOSFET
Subcategory: N-Channel

NX7002BKR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NX7002BKR Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NX7002BKR Features

  • N-Channel MOSFET technology.
  • 60V drain-to-source voltage.
  • 270mA continuous drain current.
  • 2.8 Ohm maximum Rds On.
  • Surface mount TO-236AB package.

NX7002BKR Applications

  • Suitable for low-power switching applications.
  • Ideal for battery management circuits.
  • Used in signal processing and level shifting.
  • Applicable in load switch designs.

NX7002BKR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the NX7002BKR?

60V.

What is the continuous drain current rating of the NX7002BKR?

270mA at 25°C ambient temperature.

What is the package type of the NX7002BKR?

SOT-23 (TO-236AB, SC-59).

What is the operating temperature range of the NX7002BKR?

-55°C to 150°C junction temperature.

What is the maximum on-resistance of the NX7002BKR?

2.8 Ohms at Vgs = 10V and Id = 200mA.

What is the gate threshold voltage of the NX7002BKR?

2.1V maximum at Id = 250µA.

What is the gate charge of the NX7002BKR?

1 nC at Vgs = 10V.

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