| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,295 pcs
|
1295 pcs | On Request | 1 | On Request | On Request | 2104+ | On Request | On Request | |
|
57 pcs
|
57 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The NX7002BKR from NXP Semiconductors is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 270mA at 25°C ambient temperature. The Rds On is specified at a maximum of 2.8 Ohms at 200mA drain current and 10V gate-source voltage.
This MOSFET operates with drive voltages of 5V and 10V. Its threshold voltage (Vgs(th)) is a maximum of 2.1V at 250µA. The input capacitance (Ciss) is a maximum of 23.6 pF at 10V drain-source voltage, and the gate charge (Qg) is a maximum of 1 nC at 10V gate-source voltage. The maximum gate-source voltage (Vgs) is ±20V.
With a power dissipation of 310mW (Ta) and 1.67W (Tc), the NX7002BKR is suitable for applications requiring moderate power handling. It operates within a temperature range of -55°C to 150°C (TJ). The component is housed in a TO-236AB surface mount package, specifically TO-236-3, SC-59, or SOT-23-3, and is supplied in Tape & Reel or Cut Tape packaging with a standard package quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
270mA at 25°C ambient temperature.
SOT-23 (TO-236AB, SC-59).
-55°C to 150°C junction temperature.
2.8 Ohms at Vgs = 10V and Id = 200mA.
2.1V maximum at Id = 250µA.
1 nC at Vgs = 10V.