| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,406 pcs
|
1406 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Pitch | |
| Storage Temperature |
The NX3020NAKV115 is a small signal N-channel MOSFET designed for low-power switching applications. It is rated for a maximum drain-source voltage of 30V and a continuous drain current of 200mA at 25°C ambient temperature. The device offers a drain-source on-state resistance ranging from 2.7 ohms to 4.5 ohms at VGS=10V and ID=100mA. This low on-resistance enables efficient switching with minimal power loss. The MOSFET is housed in a SOT666 surface mount package with dimensions of 1.6mm x 1.2mm x 0.55mm and a 0.5mm pitch, making it suitable for compact PCB designs. The device can operate over a junction temperature range of -55°C to 150°C and has a total power dissipation of 375mW when mounted on a standard FR4 PCB. Typical applications include load switching, DC-DC converters, and signal switching in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 30V.
The NX3020NAKV115 is available in a SOT666 surface mount package.
The junction and ambient temperature range is -55°C to 150°C.
The maximum drain current is 200mA at VGS=4.5V and Tamb=25°C.
The drain-source on-state resistance is typically 2.7 ohms and maximum 4.5 ohms at VGS=10V and ID=100mA.
The maximum total power dissipation is 375mW at Tamb=25°C on a standard FR4 PCB.