| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,020 pcs
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11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NX3008NBKMB315 is an N-Channel enhancement mode MOSFET designed for low-voltage switching applications. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of up to 530 mA at 25 °C ambient temperature when mounted on a standard FR4 PCB. The device offers a typical drain-source on-state resistance (RDSon) of 1 Ω at VGS = 4.5 V and ID = 350 mA, with a maximum of 1.4 Ω.
This MOSFET is housed in a compact DFN1006B-3 (SOT883B) surface-mount package measuring 1.0 mm x 0.6 mm with a height of 0.37 mm and a pitch of 0.35 mm, making it suitable for space-constrained designs. It supports a maximum junction temperature of 150 °C and provides electrostatic discharge protection up to 2000 V (HBM).
The device is intended for use in portable electronics, load switching, and power management circuits where small footprint and low on-resistance are critical. The peak drain current rating of 2.1 A (single pulse, tp ≤ 10 µs) allows handling of transient loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 30 V.
The maximum continuous drain current (ID) is 530 mA at VGS = 4.5 V and Tamb = 25 °C when mounted on an FR4 PCB with a 1 cm² drain pad.
The typical drain-source on-state resistance (RDSon) is 1 Ω at VGS = 4.5 V and ID = 350 mA.
It is available in a DFN1006B-3 (SOT883B) surface-mount package with dimensions 1.0 mm x 0.6 mm and a height of 0.37 mm.
The maximum junction temperature (Tj) is 150 °C.