NX2301P215 The NX2301P215 is a P-channel enhancement mode MOSFET from NXP Semiconductors, utilizing Trench MOSFET technology. It offers a low RDSon rating for efficient low-voltage gate drive.
Mfr Part #:

NX2301P215

Available from 4 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NX2301P215 is a P-channel enhancement mode MOSFET from NXP Semiconductors, utilizing Trench MOSFET technology. It offers a low RDSon rating for efficient low-voltage gate drive.
✓ Total Stock: 444,544 pcs
$ Price Range: $0.99

NX2301P215 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
334,020 pcs
334020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
57,000 pcs
57000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
50,500 pcs
50500 pcs On Request 1 On Request On Request 25+ On Request On Request
Non-Authorised Inventory information
3,024 pcs
3024 pcs On Request 1 On Request On Request On Request On Request On Request

NX2301P215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NX2301P215 Description

Short technical summary and product information.

The NXP Semiconductors NX2301P215 is a P-channel enhancement mode Field-Effect Transistor (FET) designed for various switching applications. It is housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, employing advanced Trench MOSFET technology.

 

Key features include a 1.8 V RDSon rating, which is beneficial for low-voltage gate drive applications, and very fast switching speeds. The device is AEC-Q101 qualified, indicating its suitability for demanding automotive and industrial environments.

 

This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. Its electrical characteristics include a maximum drain-source voltage of -20 V and a continuous drain current of -2 A at 25°C ambient temperature with a VGS of -4.5 V.

 

The NX2301P215 is mounted on an FR4 PCB and is available in a 3-lead SOT23 package. Its robust design and performance characteristics make it a reliable choice for power management and signal switching tasks.

NX2301P215 Quick Information

Product Type: MOSFET
Canonical Name: NX2301P215 P-channel Trench MOSFET
Subcategory: P-channel

NX2301P215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NX2301P215 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NX2301P215 Features

  • P-channel Trench MOSFET technology
  • Low voltage gate drive capability
  • Very fast switching performance
  • AEC-Q101 qualified for reliability
  • Compact SOT23 package

NX2301P215 Applications

  • Suitable for relay driver circuits
  • Ideal for high-speed line drivers
  • Used as a high-side load switch
  • Applicable in general switching circuits

NX2301P215 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NX2301P215?

The maximum drain-source voltage is -20 V.

What is the continuous drain current rating of the NX2301P215?

The continuous drain current is -2 A at 25°C ambient temperature with VGS = -4.5 V.

What is the on-state resistance (RDSon) of the NX2301P215?

The maximum drain-source on-state resistance is 120 mΩ at Tj = 25°C, VGS = -4.5 V, and ID = -1 A.

What package type is the NX2301P215 supplied in?

The NX2301P215 is supplied in a SOT23 package.

Is the NX2301P215 AEC-Q101 qualified?

Yes, the NX2301P215 is AEC-Q101 qualified.

NX2301P215 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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PMV450ENEAR
PMV450ENEAR
Nexperia USA Inc.
The Nexperia PMV450ENEAR is an N-channel Trench MOSFET designed for switching applications. It features a 60V drain-source voltage and is housed in a compact TO-236AB surface-mount package.
View Part
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