NX2301P,215 The NXP Semiconductors NX2301P,215 is a P-channel Trench MOSFET with a 20V drain-source voltage and 2A continuous drain current. It features low on-state resistance and is supplied in a compact SOT-23 package.
Mfr Part #:

NX2301P,215

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors NX2301P,215 is a P-channel Trench MOSFET with a 20V drain-source voltage and 2A continuous drain current. It features low on-state resistance and is supplied in a compact SOT-23 package.
✓ Total Stock: 174 pcs
$ Price Range: $0.99

NX2301P,215 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
87 pcs
87 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
87 pcs
87 pcs On Request 1 On Request On Request On Request On Request On Request

NX2301P,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NX2301P,215 Description

Short technical summary and product information.

The NXP Semiconductors NX2301P,215 is a P-channel enhancement mode MOSFET utilizing Trench MOSFET technology. It is designed for applications requiring low voltage gate drive, featuring a 1.8V RDSon rating and very fast switching speeds.

 

Key electrical specifications include a maximum drain-source voltage of 20V and a continuous drain current of 2A at 25°C ambient temperature. The on-state resistance (RDSon) is a maximum of 120mOhm at 1A and 4.5V Vgs. The gate-source voltage has a maximum rating of ±8V.

 

This MOSFET is housed in a small SOT-23 (TO-236AB) surface-mounted device plastic package. It has a maximum power dissipation of 400mW at 25°C ambient temperature. The operating junction temperature ranges from -55°C to +150°C.

 

Applications for the NX2301P,215 include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits.

NX2301P,215 Quick Information

Product Type: MOSFET
Canonical Name: NX2301P,215 P-Channel Trench MOSFET
Subcategory: P-Channel

NX2301P,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NX2301P,215 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NX2301P,215 Features

  • P-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 2A continuous drain current.
  • Low 120mOhm RdsOn.
  • AEC-Q101 qualified.

NX2301P,215 Applications

  • Used as a relay driver.
  • Suitable for high-speed line drivers.
  • Functions as a high-side load switch.
  • Applicable in general switching circuits.

NX2301P,215 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NX2301P,215?

The maximum drain-source voltage is 20V.

What is the continuous drain current rating?

The continuous drain current is 2A at 25°C ambient temperature.

What is the maximum on-state resistance (Rds On)?

The maximum Rds On is 120mOhm at 1A and 4.5V Vgs.

What package type is the NX2301P,215 supplied in?

It is supplied in a TO-236AB (SOT23) surface-mount package.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

Is this MOSFET AEC-Q101 qualified?

Yes, the NX2301P,215 is AEC-Q101 qualified.

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