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NVXK2TR80WDT The On Semiconductor NVXK2TR80WDT is a Silicon Carbide MOSFET Module featuring a 1200V drain-to-source voltage and 20A continuous drain current. It is qualified for automotive applications.
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NVXK2TR80WDT

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVXK2TR80WDT is a Silicon Carbide MOSFET Module featuring a 1200V drain-to-source voltage and 20A continuous drain current. It is qualified for automotive applications.
✓ Total Stock: 180 pcs
$ Price Range: $0.99

NVXK2TR80WDT Available from 1 distributor

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NVXK2TR80WDT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NVXK2TR80WDT Description

Short technical summary and product information.

The On Semiconductor NVXK2TR80WDT is an active MOSFET Module utilizing Silicon Carbide (SiC) technology. It features a 4 N-Channel (Half Bridge) configuration with a maximum drain-to-source voltage (Vdss) of 1200V (1.2kV).

 

Key electrical specifications include a continuous drain current (Id) of 20A at 25°C and a maximum Rds On of 116mOhm at 20A and 20V. The module has a gate threshold voltage (Vgs(th)) of 4.3V at 5mA, a maximum gate charge (Qg) of 56nC at 20V, and an input capacitance (Ciss) of 1154pF at 800V. The maximum power dissipation is rated at 82W.

 

This MOSFET module operates within a temperature range of -40°C to 175°C (TJ) and holds an Automotive Qualification of AEC-Q101. It is mounted via a Through Hole method and comes in a 32-PowerDIP Module package.

 

The NVXK2TR80WDT is supplied in a tube with a standard pack quantity of 60 units. Its RoHS status is reported as RoHS3 Compliant, MSL is 1 Unlimited, and REACH status is REACH Unaffected.

NVXK2TR80WDT Quick Information

Product Type: MOSFET Module
Series: APM32
Canonical Name: On Semiconductor NVXK2TR80WDT MOSFET Module
Subcategory: SIC H-BRIDGE POWER MODULE

NVXK2TR80WDT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVXK2TR80WDT Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVXK2TR80WDT Features

  • Silicon Carbide (SiC) MOSFET Module.
  • 1200V Drain to Source Voltage (Vdss).
  • 20A Continuous Drain Current (Id).
  • Automotive Qualification AEC-Q101.
  • Wide -40°C to 175°C operating temperature.

NVXK2TR80WDT Applications

  • Used in automotive traction inverters.
  • Suitable for DC-DC converters.
  • Ideal for high-voltage power supplies.
  • Applied in motor drive systems.

NVXK2TR80WDT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the NVXK2TR80WDT?

1200V.

What is the continuous drain current rating?

20A at 25°C case temperature.

What is the maximum on-resistance?

116mOhm at 20A drain current and 20V gate-source voltage.

What is the operating temperature range?

-40°C to 175°C junction temperature.

What package does the NVXK2TR80WDT come in?

32-PowerDIP Module (1.311", 33.30mm) through-hole.

Is the NVXK2TR80WDT automotive qualified?

Yes, it is AEC-Q101 qualified.

What is the gate charge of this module?

56nC maximum at 20V gate voltage.

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