| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVTYS029N08HTWG is an N-Channel MOSFET designed for power applications. It features a Drain-Source Breakdown Voltage of 80V and a low on-resistance of 32.4mOhm at a drain current of 5A and gate-source voltage of 10V. The continuous drain current is rated at 21A under case temperature conditions and 6.4A under ambient temperature conditions.
This MOSFET has a gate charge of 6.3 nC and an input capacitance of 369 pF. It operates within a temperature range of -55°C to 175°C. The device is housed in a SOT-1205, 8-LFPAK56 package, suitable for surface mounting.
Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 4V. The MOSFET technology utilizes Metal Oxide construction. Power dissipation is rated at 33W (Tc) and 3.1W (Ta).
This component is suitable for various power switching and control applications where high efficiency and reliability are required. Its surface mount capability allows for integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage is 80V.
The maximum continuous drain current is 21A (Tc).
The Rds On is a maximum of 32.4mOhm at 5A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
This is an N-Channel MOSFET.
It is in a SOT-1205, 8-LFPAK56 package.
It is a Surface Mount device.