NVTYS010N06CLTWG The On Semiconductor NVTYS010N06CLTWG is an N-Channel MOSFET designed for power applications. It features a 60V drain-source breakdown voltage and a low on-resistance.
Mfr Part #:

NVTYS010N06CLTWG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVTYS010N06CLTWG is an N-Channel MOSFET designed for power applications. It features a 60V drain-source breakdown voltage and a low on-resistance.
✓ Total Stock: 2,109 pcs
$ Price Range: $0.99

NVTYS010N06CLTWG Available from 2 distributors

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✓ Non-Authorised
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1,109 pcs
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NVTYS010N06CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVTYS010N06CLTWG Description

Short technical summary and product information.

The NVTYS010N06CLTWG from On Semiconductor is an N-Channel MOSFET with a drain-source breakdown voltage of 60V. It offers a low Rds On of 9.8mOhm at 25A and 10V gate drive, with a continuous drain current rating of 51A at case temperature and 13A at ambient temperature.

 

This MOSFET is designed for power management applications and is housed in a surface mount SOT-1205, 8-LFPAK56 package. It operates within a temperature range of -55°C to 175°C (TJ). The gate source voltage is rated at ±20V, with a threshold voltage of 2V at 35µA. Input capacitance is 910pF at 25V, and gate charge is 13nC at 10V.

 

Key electrical characteristics include a maximum power dissipation of 47W at case temperature and 3.1W at ambient temperature. The technology employed is MOSFET (Metal Oxide). This component is suitable for various power switching and control applications where high current and low on-resistance are required.

NVTYS010N06CLTWG Quick Information

Product Type: MOSFET
Series: NVTYS010N06CLTWG
Canonical Name: NVTYS010N06CLTWG N-Channel MOSFET
Subcategory: N-Channel

NVTYS010N06CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVTYS010N06CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTYS010N06CLTWG Features

  • 60V drain-source breakdown voltage.
  • Low 9.8mOhm Rds On at 25A.
  • High 51A continuous drain current.
  • Surface mount 8-LFPAK package.
  • Wide -55°C to 175°C operating temperature.

NVTYS010N06CLTWG Applications

  • Suitable for power switching circuits.
  • Ideal for high current applications.
  • Used in power management designs.
  • Efficient for DC-DC conversion.

NVTYS010N06CLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVTYS010N06CLTWG?

The maximum drain-source voltage is 60V.

What is the Rds On for the NVTYS010N06CLTWG?

The Rds On is a maximum of 9.8mOhm at 25A and 10V gate drive.

What is the continuous drain current of the NVTYS010N06CLTWG?

The continuous drain current is 51A at case temperature and 13A at ambient temperature.

What package type is the NVTYS010N06CLTWG?

It is a surface mount device in an SOT-1205, 8-LFPAK56 package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What is the RoHS status of the NVTYS010N06CLTWG?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVTYS010N06CLTWG?

The Moisture Sensitivity Level is 1 Unlimited.

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