NVTYS003N04CLTWG The ON Semiconductor NVTYS003N04CLTWG is a 40V N-Channel MOSFET designed for power applications. It features a low Rds On and is available in a surface mount package.
Mfr Part #:

NVTYS003N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVTYS003N04CLTWG is a 40V N-Channel MOSFET designed for power applications. It features a low Rds On and is available in a surface mount package.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

NVTYS003N04CLTWG Available from 1 distributor

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✓ Non-Authorised
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3000 pcs On Request 1 On Request On Request On Request On Request On Request

NVTYS003N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVTYS003N04CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVTYS003N04CLTWG is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 40V. It is designed using MOSFET (Metal Oxide) technology and offers a continuous drain current of 23A (Ta) and 106A (Tc).

 

This device features a low on-resistance (Rds On) of 3.4mOhm at 40A and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 2V at 60µA. The maximum gate-source voltage is ±20V. Its input capacitance (Ciss) is 2240 pF at 25V, and the maximum gate charge (Qg) is 36 nC at 10V.

 

The MOSFET operates within a temperature range of -55°C to 175°C (TJ). It has a maximum power dissipation of 3.2W (Ta) and 69W (Tc). The component is supplied in a surface mount package, specifically the 8-LFPAK, and is delivered on tape and reel.

 

This MOSFET is suitable for various power switching applications where high current handling and low on-resistance are critical. Its robust design and specifications make it a reliable choice for demanding electronic circuits.

NVTYS003N04CLTWG Quick Information

Product Type: MOSFET
Series: T6 40V N-CH LL IN LFPAK33
Canonical Name: N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

NVTYS003N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVTYS003N04CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTYS003N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • N-Channel MOSFET technology.
  • Low 3.4mOhm Rds On.
  • Surface mount 8-LFPAK package.
  • Wide operating temperature range.

NVTYS003N04CLTWG Applications

  • Suitable for power switching circuits.
  • Ideal for high current applications.
  • Used in demanding electronic designs.
  • Efficient power management solutions.

NVTYS003N04CLTWG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVTYS003N04CLTWG MOSFET?

The drain-to-source voltage (Vdss) is 40V.

What is the continuous drain current for the NVTYS003N04CLTWG?

The continuous drain current is 23A at 25°C (Ta) and 106A at 25°C (Tc).

What is the maximum on-resistance (Rds On) for this MOSFET?

The Rds On is a maximum of 3.4mOhm when the drain current is 40A and the gate-source voltage is 10V.

What is the operating temperature range of the NVTYS003N04CLTWG?

The operating temperature range is -55°C to 175°C (TJ).

What type of package is the NVTYS003N04CLTWG MOSFET in?

It is supplied in a surface mount 8-LFPAK package.

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